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Mostrati risultati da 46 a 63 di 63
Titolo Data di pubblicazione Autore(i) File
On the experimental determination of channel back-scattering in nanoMOSFETs 1-gen-2007 Zilli, Massimiliano; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 1-gen-2017 Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 1-gen-2016 Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M.
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 1-gen-2003 Lucci, L.; Esseni, D.; Loo, J.; Ponomarev, Y.; Selmi, L.; Abramo, A.; Sangiorgi, E.
Quantum electronics and compound semiconductors - HEMTs: Physics and new technologies 1-gen-2004 Suemitsu, T.; Verzellesi, G.
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 1-gen-2017 Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L.
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 1-gen-2015 Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 1-gen-2011 Paussa, A; Geromel, M; Palestri, Pierpaolo; Bresciani, M; Esseni, David; Selmi, Luca
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 1-gen-2011 Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 1-gen-2010 Conzatti, Francesco; Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments 1-gen-2002 Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
Statistical simulations to inspect and predict data retention and program disturbs in Flash memories 1-gen-2003 Larcher, Luca; Pavan, Paolo
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 1-gen-2002 Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico
Substrate enhanced degradation of cmos devices 1-gen-2000 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 1-gen-2013 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Towards Microscopic Understanding of MOSFET Reliability: the Role of Carrier Energy and Transport Simulations 1-gen-2003 Selmi, Luca; Esseni, David; Palestri, Pierpaolo
Transport in deca-nanometric MOSFETs: from bandstructure to on-currents 1-gen-2006 Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Trapping and High Field Related Issues in GaN Power HEMTs 1-gen-2014 Meneghesso, Gaudenzio; Meneghini, Matteo; Chini, Alessandro; Verzellesi, Giovanni; Zanoni, Enrico
Mostrati risultati da 46 a 63 di 63
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