In this work we employ a state-of-the-art Multi-Subband Monte Carlo simulator to investigate the performance of III-V n-MOSFETs with LG = 11.7nm. We analyze GaSb versus InGaAs strained and unstrained channel materials and the implications of Fermi level pinning on electrostatic and transport. We found that InGaAs MOSFETs can outperform strained silicon for low VDD applications. Advantages related to strained InGaAs are limited and mainly due to reduced Fermi Level Pinning.
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain / Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca. - ELETTRONICO. - 2015-February:February(2015), pp. 7.6.1-7.6.4. (Intervento presentato al convegno 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 tenutosi a San Francisco nel 13-15 Dec. 2014) [10.1109/IEDM.2014.7047006].
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain
PALESTRI, Pierpaolo;SELMI, Luca
2015
Abstract
In this work we employ a state-of-the-art Multi-Subband Monte Carlo simulator to investigate the performance of III-V n-MOSFETs with LG = 11.7nm. We analyze GaSb versus InGaAs strained and unstrained channel materials and the implications of Fermi level pinning on electrostatic and transport. We found that InGaAs MOSFETs can outperform strained silicon for low VDD applications. Advantages related to strained InGaAs are limited and mainly due to reduced Fermi Level Pinning.
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