In this paper we present experimental evidence of the contribution of stress induced traps to Substrate Hot Electron (SHE) injection. We investigate the energy distribution of traps generated by Fowler Nordheim (FN) and Hot Electron (HE) stress with the aid of simulations and experiments. Results suggest that HE stress generates more oxide traps at high energy with respect to FN stress. The comparison between experiments and simulations also provides a new additional evidence of the inelastic nature of the trap assisted tunneling mechanism.

Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments / Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.. - STAMPA. - (2002), pp. 159-162. (Intervento presentato al convegno 2002 IEEE International Devices Meeting (IEDM) tenutosi a San Francisco, CA, usa nel Dec. 2002) [10.1109/IEDM.2002.1175803].

Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments

SELMI, Luca;
2002

Abstract

In this paper we present experimental evidence of the contribution of stress induced traps to Substrate Hot Electron (SHE) injection. We investigate the energy distribution of traps generated by Fowler Nordheim (FN) and Hot Electron (HE) stress with the aid of simulations and experiments. Results suggest that HE stress generates more oxide traps at high energy with respect to FN stress. The comparison between experiments and simulations also provides a new additional evidence of the inelastic nature of the trap assisted tunneling mechanism.
2002
2002 IEEE International Devices Meeting (IEDM)
San Francisco, CA, usa
Dec. 2002
159
162
Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments / Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.. - STAMPA. - (2002), pp. 159-162. (Intervento presentato al convegno 2002 IEEE International Devices Meeting (IEDM) tenutosi a San Francisco, CA, usa nel Dec. 2002) [10.1109/IEDM.2002.1175803].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162767
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