Sfoglia per Autore
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs
2022 Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs
2023 Zagni, N.; Chini, A.; Verzellesi, G.; Cioni, M.; Giorgino, G.; Nicotra, M. C.; Castagna, M. E.; Iucolano, F.
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability
2023 Zanoni, Enrico; Gao, Zhan; Fornasier, Mirko; Saro, Marco; Rampazzo, Fabiana; De Santi, Carlo; Meneghesso, Gaudenzio; Meneghini, Matteo; Cioni, Marcello; Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors
2023 Pujar, Pavan; Cho, Haewon; Kim, Young-Hoon; Zagni, Nicolo; Oh, Jeonghyeon; Lee, Eunha; Gandla, Srinivas; Nukala, Pavan; Kim, Young-Min; Alam, Muhammad Ashraful; Kim, Sunkook
Gate-Bias Induced RON Instability in p-GaN Power HEMTs
2023 Chini, Alessandro; Zagni, Nicolo'; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Castagna, Maria Eloisa; Iucolano, Ferdinando
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm AlGaN/GaN HEMTs for Power RF Applications
2023 Zagni, Nicolo'; Zhan, Veronica Gao; Verzellesi, Giovanni; Chini, Alessandro; Pantellini, Alessio; Natali, Marco; Lucibello, Andrea; Latessa, Luca; Lanzieri, Claudio; Santi, Carlo De; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico
Negative Capacitors and Applications
2023 Ashraful Alam, Muhammad; Zagni, Nicolo'; Kumar Saha, Atanu; Thakuria, Niharika; Thirumala, Sandeep; Kumar Gupta, Sumeet
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs
2023 Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Eloisa Castagna, Maria; Iucolano, Ferdinando
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
2023 Zagni, Nicolo'; Puglisi, Francesco Maria; Pavan, Paolo; Alam, Muhammad Ashraful
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD
2024 Zagni, Nicolo'; Fregolent, Manuel; Del Fiol, Andrea; Favero, Davide; Bergamin, Francesco; Verzellesi, Giovanni; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Huber, Christian; Meneghini, Matteo; Pavan, Paolo
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
2024 Zanoni, Enrico; Santi, Carlo De; Gao, Zhan; Buffolo, Matteo; Fornasier, Mirko; Saro, Marco; Pieri, Francesco De; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Meneghini, Matteo; Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors
2024 Zagni, Nicolo'; Fregolent, Manuel; Verzellesi, Giovanni; Marcuzzi, Alberto; Santi, Carlo De; Meneghesso, Gaudenzio; Zanoni, Enrico; Treidel, Eldad Bahat; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Meneghini, Matteo; Pavan, Paolo
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs
2024 Zagni, N.; Verzellesi, G.; Bertacchini, A.; Borgarino, M.; Iucolano, F.; Chini, A.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs | 1-gen-2022 | Zagni, Nicolò; Cioni, Marcello; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro | |
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs | 1-gen-2023 | Zagni, N.; Chini, A.; Verzellesi, G.; Cioni, M.; Giorgino, G.; Nicotra, M. C.; Castagna, M. E.; Iucolano, F. | |
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability | 1-gen-2023 | Zanoni, Enrico; Gao, Zhan; Fornasier, Mirko; Saro, Marco; Rampazzo, Fabiana; De Santi, Carlo; Meneghesso, Gaudenzio; Meneghini, Matteo; Cioni, Marcello; Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni | |
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors | 1-gen-2023 | Pujar, Pavan; Cho, Haewon; Kim, Young-Hoon; Zagni, Nicolo; Oh, Jeonghyeon; Lee, Eunha; Gandla, Srinivas; Nukala, Pavan; Kim, Young-Min; Alam, Muhammad Ashraful; Kim, Sunkook | |
Gate-Bias Induced RON Instability in p-GaN Power HEMTs | 1-gen-2023 | Chini, Alessandro; Zagni, Nicolo'; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Castagna, Maria Eloisa; Iucolano, Ferdinando | |
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm AlGaN/GaN HEMTs for Power RF Applications | 1-gen-2023 | Zagni, Nicolo'; Zhan, Veronica Gao; Verzellesi, Giovanni; Chini, Alessandro; Pantellini, Alessio; Natali, Marco; Lucibello, Andrea; Latessa, Luca; Lanzieri, Claudio; Santi, Carlo De; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico | |
Negative Capacitors and Applications | 1-gen-2023 | Ashraful Alam, Muhammad; Zagni, Nicolo'; Kumar Saha, Atanu; Thakuria, Niharika; Thirumala, Sandeep; Kumar Gupta, Sumeet | |
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs | 1-gen-2023 | Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni; Cioni, Marcello; Giorgino, Giovanni; Nicotra, Maria Concetta; Eloisa Castagna, Maria; Iucolano, Ferdinando | |
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges | 1-gen-2023 | Zagni, Nicolo'; Puglisi, Francesco Maria; Pavan, Paolo; Alam, Muhammad Ashraful | |
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD | 1-gen-2024 | Zagni, Nicolo'; Fregolent, Manuel; Del Fiol, Andrea; Favero, Davide; Bergamin, Francesco; Verzellesi, Giovanni; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Huber, Christian; Meneghini, Matteo; Pavan, Paolo | |
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability | 1-gen-2024 | Zanoni, Enrico; Santi, Carlo De; Gao, Zhan; Buffolo, Matteo; Fornasier, Mirko; Saro, Marco; Pieri, Francesco De; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Meneghini, Matteo; Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni | |
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors | 1-gen-2024 | Zagni, Nicolo'; Fregolent, Manuel; Verzellesi, Giovanni; Marcuzzi, Alberto; Santi, Carlo De; Meneghesso, Gaudenzio; Zanoni, Enrico; Treidel, Eldad Bahat; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Meneghini, Matteo; Pavan, Paolo | |
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs | 1-gen-2024 | Zagni, N.; Verzellesi, G.; Bertacchini, A.; Borgarino, M.; Iucolano, F.; Chini, A. |
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