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Mostrati risultati da 21 a 40 di 52
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Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 1-gen-2020 Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 1-gen-2020 Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 1-gen-2021 Hong, Seongin; Zagni, Nicolo'; Choo, Sooho; Liu, Na; Baek, Seungho; Bala, Arindam; Yoo, Hocheon; Ha Kang, Byung; Jae Kim, Hyun; Joong Yun, Hyung; Ashraful Alam, Muhammad; Kim, Sunkook
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 1-gen-2021 Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 1-gen-2021 Zagni, Nicolo'; Chini, Alessandro; Puglisi, Francesco Maria; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Pavan, Paolo; Verzellesi, Giovanni
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 1-gen-2021 Cioni, Marcello; Zagni, Nicolo; Selmi, Luca; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico; Chini, Alessandro
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective 1-gen-2021 Zagni, Nicolo'; Ashraful Alam, Muhammad
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 1-gen-2021 Zagni, Nicolo'; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 1-gen-2021 Cioni, Marcello; Bertacchini, Alessandro; Mucci, Alessandro; Zagni, Nicolò; Verzellesi, Giovanni; Pavan, Paolo; Chini, Alessandro
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 1-gen-2021 Cioni, Marcello; Zagni, Nicolo; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro
GaN-based power devices: Physics, reliability, and perspectives 1-gen-2021 Meneghini, Matteo; De Santi, Carlo; Abid, Idriss; Buffolo, Matteo; Cioni, Marcello; Khadar, Riyaz Abdul; Nela, Luca; Zagni, Nicolò; Chini, Alessandro; Medjdoub, Farid; Meneghesso, Gaudenzio; Verzellesi, Giovanni; Zanoni, Enrico; Matioli, Elison
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach 1-gen-2021 Mahajan, Bikram Kishore; Chen, Yen-Pu; Zagni, Nicolò; Alam, Muhammad Ashraful
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 1-gen-2021 Caruso, Enrico; Esseni, David; Gnani, Elena; Lizzit, Daniel; Palestri, Pierpaolo; Pin, Alessandro; Puglisi, Francesco Maria; Selmi, Luca; Zagni, Nicolò
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 1-gen-2021 Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo 22-mar-2021 Zagni, Nicolo'
Symmetrical VTH/RONDrifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs 1-gen-2022 Zagni, N.; Cioni, M.; Castagna, M. E.; Moschetti, M.; Iucolano, F.; Verzellesi, G.; Chini, A.
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications 1-gen-2022 Zagni, Nicolo'; Verzellesi, Giovanni; Chini, Alessandro
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 1-gen-2022 Cioni, Marcello; Zagni, Nicolo; Chini, Alessandro
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 1-gen-2022 Cioni, M.; Zagni, N.; Chini, A.
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 1-gen-2022 De Santi, Carlo; Zanoni, Enrico; Meneghini, Matteo; Meneghesso, Gaudenzio; Rampazzo, Fabiana; Gao, Veronica Zhan; Sharma, Chandan; Chiocchetta, Francesca; Verzellesi, Giovanni; Chini, Alessandro; Cioni, Marcello; Zagni, Nicolò; Lanzieri, Claudio; Pantellini, Alessio; Peroni, Marco; Latessa, Luca
Mostrati risultati da 21 a 40 di 52
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