GIORGINO, GIOVANNI
 Distribuzione geografica
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Continente #
AS - Asia 839
NA - Nord America 470
EU - Europa 314
SA - Sud America 82
AF - Africa 17
Totale 1.722
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Nazione #
US - Stati Uniti d'America 447
SG - Singapore 294
CN - Cina 236
IT - Italia 172
BR - Brasile 62
VN - Vietnam 59
KR - Corea 56
BD - Bangladesh 54
HK - Hong Kong 52
FR - Francia 27
GB - Regno Unito 27
DE - Germania 22
TW - Taiwan 19
IN - India 17
RU - Federazione Russa 17
FI - Finlandia 14
CA - Canada 13
ZA - Sudafrica 10
AR - Argentina 8
MX - Messico 8
ID - Indonesia 7
IQ - Iraq 7
NL - Olanda 7
LT - Lituania 6
CO - Colombia 5
JP - Giappone 5
PL - Polonia 5
AE - Emirati Arabi Uniti 4
AT - Austria 4
PK - Pakistan 4
SA - Arabia Saudita 4
SE - Svezia 4
DK - Danimarca 3
EC - Ecuador 3
MA - Marocco 3
TR - Turchia 3
UZ - Uzbekistan 3
AZ - Azerbaigian 2
ET - Etiopia 2
IE - Irlanda 2
KE - Kenya 2
KW - Kuwait 2
MD - Moldavia 2
PH - Filippine 2
AL - Albania 1
BH - Bahrain 1
BO - Bolivia 1
CR - Costa Rica 1
ES - Italia 1
IL - Israele 1
KZ - Kazakistan 1
LB - Libano 1
LK - Sri Lanka 1
MY - Malesia 1
OM - Oman 1
PE - Perù 1
PY - Paraguay 1
TH - Thailandia 1
TJ - Tagikistan 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
Totale 1.722
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Città #
Singapore 204
Hefei 123
Santa Clara 98
San Jose 85
Milan 68
Hong Kong 52
Seoul 47
Ashburn 33
London 22
Council Bluffs 19
Beijing 18
Hanoi 18
Chicago 17
Los Angeles 17
Boardman 15
Ho Chi Minh City 15
The Dalles 15
Modena 11
Kent 10
New York 9
Helsinki 8
Shanghai 8
Bologna 7
Buffalo 7
Taipei 7
Dallas 6
Johannesburg 6
Reggio Emilia 6
Baghdad 5
Dijon 5
Formigine 5
Frankfurt am Main 5
Guangzhou 5
Haiphong 5
Lappeenranta 5
Lauterbourg 5
Rome 5
Tours 5
Brooklyn 4
Curitiba 4
Delhi 4
Jakarta 4
Moscow 4
Nuremberg 4
Orem 4
Padua 4
Salt Lake City 4
Shenzhen 4
Stockholm 4
Turin 4
Zhongli District 4
Amsterdam 3
Biên Hòa 3
Buk-gu 3
Changsha 3
Columbus 3
Dhaka 3
Essen 3
Gladbeck 3
Jeddah 3
Lonato 3
Nanjing 3
Nice 3
Odense 3
Padova 3
Palermo 3
Paris 3
Piacenza 3
Redondo Beach 3
São Paulo 3
Tashkent 3
Toronto 3
Wallingford 3
Warsaw 3
Yongin-si 3
Addis Ababa 2
Baku 2
Bari 2
Bengaluru 2
Boston 2
Brantford 2
Bắc Ninh 2
Cape Town 2
Casale Monferrato 2
Catania 2
Charlotte 2
Chengdu 2
Chennai 2
Da Nang 2
Dubai 2
Dublin 2
Genoa 2
Hangzhou 2
Joinville 2
Kaohsiung 2
Lahore 2
Memphis 2
Mexico City 2
Moglia 2
Montreal 2
Totale 1.175
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Nome #
Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs 176
Impact of Gate and Drain Leakage on VTHDrift and Dynamic-RONof 100V p-GaN Gate AlGaN/GaN HEMTs 170
Temperature Effect on RON-degradation induced by Off-state Drain Voltage Stress 168
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 159
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 133
Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies 130
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 127
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 123
Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs 122
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 104
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 104
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 47
Impact of Substrate connection on Dynamic-RON drift of 650V normally-off Monolithic Bidirectional AlGaN/GaN HEMT 36
Impact of SiN Passivation on Dynamic-RON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs 33
On the Correlation Between Dynamic-QOSS and Dynamic-RON in GaN-Based HEMTs 26
Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs 18
Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs 16
On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs 16
Preliminary Evaluation of PBTI and Back-Effect interplay in 100 V p-GaN gate AlGaN/GaN HEMTs 14
Evidence of Carbon Doping Effect on VTHDrift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs 13
Caratterizzazione e simulazioni TCAD di dispositivi di potenza in nitruro di gallio 12
Totale 1.747
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Categoria #
all - tutte 6.127
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.127
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202456 0 0 0 0 0 0 0 24 3 2 4 23
2024/2025477 14 3 7 48 72 61 21 35 48 22 68 78
2025/20261.214 72 82 91 106 175 51 143 53 88 162 98 93
Totale 1.747