GIORGINO, GIOVANNI
 Distribuzione geografica
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Continente #
AS - Asia 913
NA - Nord America 428
EU - Europa 338
SA - Sud America 96
AF - Africa 19
Totale 1.794
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Nazione #
US - Stati Uniti d'America 410
SG - Singapore 339
CN - Cina 280
IT - Italia 176
BR - Brasile 73
KR - Corea 64
VN - Vietnam 64
HK - Hong Kong 61
GB - Regno Unito 32
FR - Francia 29
DE - Germania 22
RU - Federazione Russa 21
TW - Taiwan 19
IN - India 18
FI - Finlandia 15
BD - Bangladesh 12
MX - Messico 10
ZA - Sudafrica 9
AR - Argentina 8
CA - Canada 8
IQ - Iraq 8
ID - Indonesia 7
NL - Olanda 7
CO - Colombia 6
JP - Giappone 6
LT - Lituania 6
PL - Polonia 6
AT - Austria 5
AE - Emirati Arabi Uniti 4
ES - Italia 4
MA - Marocco 4
PK - Pakistan 4
SA - Arabia Saudita 4
SE - Svezia 4
TR - Turchia 4
DK - Danimarca 3
EC - Ecuador 3
PE - Perù 3
UZ - Uzbekistan 3
AZ - Azerbaigian 2
BE - Belgio 2
DZ - Algeria 2
ET - Etiopia 2
IE - Irlanda 2
KE - Kenya 2
KW - Kuwait 2
MD - Moldavia 2
MY - Malesia 2
PH - Filippine 2
AL - Albania 1
BH - Bahrain 1
BO - Bolivia 1
GR - Grecia 1
IL - Israele 1
KZ - Kazakistan 1
LB - Libano 1
LK - Sri Lanka 1
OM - Oman 1
PY - Paraguay 1
TH - Thailandia 1
TJ - Tagikistan 1
UY - Uruguay 1
Totale 1.794
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Città #
Singapore 223
Hefei 153
Santa Clara 120
Milan 80
San Jose 63
Hong Kong 59
Seoul 54
Ashburn 35
London 27
Hanoi 19
Beijing 17
Chicago 17
Ho Chi Minh City 16
Los Angeles 16
The Dalles 15
Kent 12
Council Bluffs 11
Modena 11
Shanghai 10
Boardman 9
Bologna 9
Helsinki 9
Guangzhou 7
Reggio Emilia 7
Taipei 7
Frankfurt am Main 6
Lauterbourg 6
Nice 6
Baghdad 5
Buffalo 5
Dallas 5
Dijon 5
Formigine 5
Haiphong 5
Johannesburg 5
Lappeenranta 5
Moscow 5
Tours 5
Turin 5
Amsterdam 4
Brooklyn 4
Curitiba 4
Delhi 4
Jakarta 4
Las Rozas de Madrid 4
New York 4
Nuremberg 4
Orem 4
Padua 4
Redondo Beach 4
Salt Lake City 4
Shenzhen 4
Stockholm 4
Warsaw 4
Zhongli District 4
Biên Hòa 3
Buk-gu 3
Cavallino 3
Changsha 3
Dhaka 3
Essen 3
Gladbeck 3
Jeddah 3
Lonato 3
Nanjing 3
Odense 3
Padova 3
Palermo 3
Paternò 3
Piacenza 3
Querétaro 3
Rome 3
São Paulo 3
Tashkent 3
Vienna 3
Wallingford 3
Yongin-si 3
Addis Ababa 2
Baku 2
Bari 2
Bengaluru 2
Boston 2
Brantford 2
Bắc Ninh 2
Cape Town 2
Casale Monferrato 2
Catania 2
Chengdu 2
Chennai 2
Chiyoda-ku 2
Columbus 2
Da Nang 2
Dubai 2
Dublin 2
Elk Grove Village 2
Falkenstein 2
Hangzhou 2
Joinville 2
Kaohsiung 2
Lahore 2
Totale 1.255
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Nome #
Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs 174
Impact of Gate and Drain Leakage on VTHDrift and Dynamic-RONof 100V p-GaN Gate AlGaN/GaN HEMTs 168
Temperature Effect on RON-degradation induced by Off-state Drain Voltage Stress 163
GaN on Si Power and RF Devices and Application 141
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 138
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 130
Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies 126
Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs 120
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 119
Improved High Temperature Behaviour of On-Resistance in 100V p-GaN HEMTs 115
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 103
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 100
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 80
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 45
Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs 15
Impact of Substrate connection on Dynamic-RON drift of 650V normally-off Monolithic Bidirectional AlGaN/GaN HEMT 14
On the Correlation Between Dynamic-QOSS and Dynamic-RON in GaN-Based HEMTs 13
Evidence of Carbon Doping Effect on VTHDrift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs 11
Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs 11
Preliminary Evaluation of PBTI and Back-Effect interplay in 100 V p-GaN gate AlGaN/GaN HEMTs 11
On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs 11
Impact of SiN Passivation on Dynamic-RON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs 9
Caratterizzazione e simulazioni TCAD di dispositivi di potenza in nitruro di gallio 4
Totale 1.821
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Categoria #
all - tutte 5.885
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.885
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202470 0 0 0 0 0 0 0 33 4 2 5 26
2024/2025602 18 3 8 60 92 73 32 48 64 28 82 94
2025/20261.149 90 95 106 124 193 53 163 53 97 166 9 0
Totale 1.821