statistiche ricercatore

Nome	#
Impact of Gate and Drain Leakage on VTHDrift and Dynamic-RONof 100V p-GaN Gate AlGaN/GaN HEMTs	19
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs	16
Temperature Effect on RON-degradation induced by Off-state Drain Voltage Stress	13
GaN on Si Power and RF Devices and Application	12
Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies	12
Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs	9
Improved High Temperature Behaviour of On-Resistance in 100V p-GaN HEMTs	7
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs	6
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers	4
Totale	98

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2023/2024	70	0	0	0	0	0	0	0	33	4	2	5	26
2024/2025	28	18	3	7	0	0	0	0	0	0	0	0	0
Totale													98