The impact of gate and drain leakage on VTH drift and dynamic-RON of 100 V p-GaN gate AlGaN/GaN HEMTs is investigated in this work. Devices presenting two different AlGaN barrier layer designs are characterized by means of DC gate/drain leakage and Pulsed I-V measurements. Results show that a larger gate leakage yields a reduced positive VTH drift under off-state stress at large VDS, coherently with hole injection in the floating p-GaN gate. Conversely, a larger off-state drain leakage current exacerbates the RON degradation at high VDS,stress due to hot-electrons effects. The application of a negative VGS,stress has been demonstrated to solve this issue, thanks to a more pinched-off channel that avoids hot-electrons related issues.
Impact of Gate and Drain Leakage on VTHDrift and Dynamic-RONof 100V p-GaN Gate AlGaN/GaN HEMTs / Cioni, M., Giorgino, G., Chini, A., Parisi, A., Cappellini, G., Modica, L., Luongo, G., Miccoli, C., Castagna, M.E., Moschetti, M., Tringali, C., Iucolano, F.. - (2023). (2023 AEIT International Conference on Electrical and Electronic Technologies for Automotive, AEIT AUTOMOTIVE 2023 ita 2023).
Impact of Gate and Drain Leakage on VTHDrift and Dynamic-RONof 100V p-GaN Gate AlGaN/GaN HEMTs
Giorgino G.;Chini A.;Modica L.;
2023
Abstract
The impact of gate and drain leakage on VTH drift and dynamic-RON of 100 V p-GaN gate AlGaN/GaN HEMTs is investigated in this work. Devices presenting two different AlGaN barrier layer designs are characterized by means of DC gate/drain leakage and Pulsed I-V measurements. Results show that a larger gate leakage yields a reduced positive VTH drift under off-state stress at large VDS, coherently with hole injection in the floating p-GaN gate. Conversely, a larger off-state drain leakage current exacerbates the RON degradation at high VDS,stress due to hot-electrons effects. The application of a negative VGS,stress has been demonstrated to solve this issue, thanks to a more pinched-off channel that avoids hot-electrons related issues.
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