In this paper, we investigate the impact of Buffer resistivity and AlGaN barrier design on back-bias stress performed on 100 V p-GaN gate AlGaN/GaN HEMTs. To this end, we compare the results obtained in terms of (i) vertical leakage, (ii) back-bias stress on Transmission Line Measurements (TLM) structures and (iii) back-gating on real transistors. Concerning the latter, a novel test sequence is implemented to monitor the drain current evolution during the stress and evaluate the impact on V TH and R ON parameters after 1000 s stress with V SUB =-50 V. Results indicate that high resistive buffer can significantly reduce the back-bias effect, but also the AlGaN barrier design can affect the parameters drift due to a different two-dimensional electron gas (2DEG) density.
Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs / Cioni, M.; Giorgino, G.; Chini, A.; Marletta, G.; Miccoli, C.; Castagna, M. E.; Luongo, G.; Moschetti, M.; Tringali, C.; Iucolano, F.. - (2023). (Intervento presentato al convegno 10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 tenutosi a usa nel 2023) [10.1109/WiPDA58524.2023.10382224].
Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs
Giorgino G.;Chini A.;
2023
Abstract
In this paper, we investigate the impact of Buffer resistivity and AlGaN barrier design on back-bias stress performed on 100 V p-GaN gate AlGaN/GaN HEMTs. To this end, we compare the results obtained in terms of (i) vertical leakage, (ii) back-bias stress on Transmission Line Measurements (TLM) structures and (iii) back-gating on real transistors. Concerning the latter, a novel test sequence is implemented to monitor the drain current evolution during the stress and evaluate the impact on V TH and R ON parameters after 1000 s stress with V SUB =-50 V. Results indicate that high resistive buffer can significantly reduce the back-bias effect, but also the AlGaN barrier design can affect the parameters drift due to a different two-dimensional electron gas (2DEG) density.
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