NOBILI, Carlo Emanuele
 Distribuzione geografica
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Continente #
NA - Nord America 3.162
EU - Europa 1.398
AS - Asia 1.209
SA - Sud America 118
AF - Africa 33
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 5.923
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Nazione #
US - Stati Uniti d'America 3.128
GB - Regno Unito 731
SG - Singapore 404
CN - Cina 314
VN - Vietnam 152
SE - Svezia 145
HK - Hong Kong 142
IT - Italia 130
DE - Germania 104
BR - Brasile 90
RU - Federazione Russa 69
FR - Francia 49
UA - Ucraina 49
BD - Bangladesh 45
FI - Finlandia 45
TR - Turchia 35
KR - Corea 31
IN - India 28
BG - Bulgaria 24
CA - Canada 19
JP - Giappone 12
AR - Argentina 11
BE - Belgio 10
ID - Indonesia 10
MX - Messico 9
ZA - Sudafrica 9
PL - Polonia 8
CH - Svizzera 7
IE - Irlanda 7
AE - Emirati Arabi Uniti 6
MA - Marocco 6
NL - Olanda 6
ES - Italia 5
CO - Colombia 4
IQ - Iraq 4
KE - Kenya 4
MY - Malesia 4
DZ - Algeria 3
EC - Ecuador 3
PE - Perù 3
PK - Pakistan 3
SN - Senegal 3
UZ - Uzbekistan 3
AT - Austria 2
AZ - Azerbaigian 2
BY - Bielorussia 2
CL - Cile 2
EG - Egitto 2
ET - Etiopia 2
EU - Europa 2
KZ - Kazakistan 2
TW - Taiwan 2
VE - Venezuela 2
AL - Albania 1
AO - Angola 1
AU - Australia 1
BO - Bolivia 1
BS - Bahamas 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
GN - Guinea 1
IL - Israele 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
LT - Lituania 1
LV - Lettonia 1
MG - Madagascar 1
MN - Mongolia 1
PA - Panama 1
PR - Porto Rico 1
PY - Paraguay 1
RS - Serbia 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TG - Togo 1
TH - Thailandia 1
UY - Uruguay 1
Totale 5.923
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Città #
Southend 604
Fairfield 335
Ashburn 323
Santa Clara 268
Singapore 239
Woodbridge 236
Houston 187
Chandler 173
Ann Arbor 153
Hong Kong 138
Wilmington 130
Cambridge 118
Seattle 117
San Jose 109
Hefei 105
Jacksonville 103
Nyköping 78
Dearborn 75
Los Angeles 68
The Dalles 56
London 53
Beijing 49
Ho Chi Minh City 42
Hanoi 41
Council Bluffs 32
Modena 31
San Diego 31
Seoul 30
Buffalo 26
Sofia 24
Des Moines 23
Princeton 23
Munich 21
Bremen 20
Eugene 19
Helsinki 19
Izmir 18
Lauterbourg 16
Milan 16
São Paulo 16
Philadelphia 15
Moscow 13
New York 13
Chicago 12
Grafing 12
Brussels 10
Shanghai 10
Columbus 9
Da Nang 9
Solihull 9
Washington 9
Haiphong 8
Nanjing 8
Orem 8
Dallas 7
Falls Church 7
Guangzhou 7
Phoenix 7
Turku 7
Dublin 6
Redwood City 6
Salt Lake City 6
Auburn Hills 5
Boardman 5
Brantford 5
Denver 5
Hounslow 5
Naples 5
Reutlingen 5
Amsterdam 4
Atlanta 4
Elk Grove Village 4
Lancaster 4
Montreal 4
Nairobi 4
Sterling 4
Tampa 4
Tokyo 4
Toronto 4
Warsaw 4
Belo Horizonte 3
Biên Hòa 3
Bologna 3
Bolzano 3
Bắc Ninh 3
Can Tho 3
Chavannes 3
Delhi 3
Dubai 3
Frankfurt am Main 3
Jakarta 3
Johannesburg 3
Kent 3
Kunming 3
Mexico City 3
Mumbai 3
Ninh Bình 3
San Mateo 3
Stockholm 3
Tashkent 3
Totale 4.502
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 420
Thermal desorption spectra from cavities in helium-implanted silicon 376
Vacancy-gettering in silicon: Cavities and helium-implantation 373
Helium-implanted silicon: A study of bubble precursors 367
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 357
Damage evolution in helium-hydrogen co-implanted (100) silicon 323
Transmission electron microscopy study of helium implanted silicon 319
Hydrogen and helium bubbles in silicon 318
Copper–titanium thin film interaction 317
Visible luminescence from silicon by hydrogen implantation and annealing treatments 308
Helium in silicon: Thermal-desorption investigation of bubble precursors 306
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 288
Transmission Electron Microscopy study of Helium Implanted Silicon 274
Visible photoluminescence from He‐implanted silicon 274
He-implantation induced defects in Si studied by slow positron annihilation spectroscopy 271
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 261
Early stages of bubble formation in helium-implated (100) silicon 258
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 223
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 154
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 153
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
ORDERING PROCESS IN TETRAGONAL YBCO DOPED WITH FE AND ZN 1
OXYGEN DISORDERING IN TETRAGONAL Y1BA2CU3O6+EPSILON - A TIME-DEPENDENT STUDY 1
Totale 5.947
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Categoria #
all - tutte 22.514
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.514
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202123 0 0 0 0 0 0 0 0 0 0 0 23
2021/2022479 38 44 64 26 7 20 44 21 46 37 100 32
2022/2023481 47 65 26 33 74 95 3 48 51 5 11 23
2023/2024209 3 17 5 43 68 15 8 23 4 3 3 17
2024/2025937 32 5 6 84 160 132 59 82 118 13 117 129
2025/20261.545 78 64 149 128 233 137 205 63 164 143 122 59
Totale 5.947