NOBILI, Carlo Emanuele
 Distribuzione geografica
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Continente #
NA - Nord America 3.320
EU - Europa 1.412
AS - Asia 1.225
SA - Sud America 124
AF - Africa 33
Continente sconosciuto - Info sul continente non disponibili 26
OC - Oceania 1
Totale 6.141
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Nazione #
US - Stati Uniti d'America 3.277
GB - Regno Unito 732
SG - Singapore 406
CN - Cina 319
VN - Vietnam 152
HK - Hong Kong 145
SE - Svezia 145
IT - Italia 141
DE - Germania 104
BR - Brasile 93
RU - Federazione Russa 69
BD - Bangladesh 50
FR - Francia 49
UA - Ucraina 49
FI - Finlandia 45
TR - Turchia 35
KR - Corea 31
IN - India 28
BG - Bulgaria 24
CA - Canada 23
AR - Argentina 12
JP - Giappone 12
BE - Belgio 10
ID - Indonesia 10
MX - Messico 9
ZA - Sudafrica 9
PL - Polonia 8
CH - Svizzera 7
IE - Irlanda 7
NL - Olanda 7
AE - Emirati Arabi Uniti 6
CO - Colombia 6
ES - Italia 6
MA - Marocco 6
IQ - Iraq 4
KE - Kenya 4
MY - Malesia 4
DZ - Algeria 3
EC - Ecuador 3
PE - Perù 3
PK - Pakistan 3
SN - Senegal 3
UZ - Uzbekistan 3
AT - Austria 2
AZ - Azerbaigian 2
BY - Bielorussia 2
CL - Cile 2
EG - Egitto 2
ET - Etiopia 2
EU - Europa 2
GT - Guatemala 2
KZ - Kazakistan 2
TW - Taiwan 2
VE - Venezuela 2
AL - Albania 1
AO - Angola 1
AU - Australia 1
BO - Bolivia 1
BS - Bahamas 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
GN - Guinea 1
HN - Honduras 1
IL - Israele 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
LT - Lituania 1
LV - Lettonia 1
MG - Madagascar 1
MN - Mongolia 1
NI - Nicaragua 1
PA - Panama 1
PH - Filippine 1
PR - Porto Rico 1
PY - Paraguay 1
RS - Serbia 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TG - Togo 1
TH - Thailandia 1
UY - Uruguay 1
Totale 6.117
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Città #
Southend 604
Ashburn 386
Fairfield 335
Santa Clara 275
Singapore 241
Woodbridge 236
Houston 187
Chandler 173
Ann Arbor 153
Hong Kong 141
Wilmington 131
Cambridge 118
Seattle 118
San Jose 110
Hefei 105
Jacksonville 103
Nyköping 78
Dearborn 75
Los Angeles 68
The Dalles 56
London 53
Council Bluffs 52
Beijing 51
Ho Chi Minh City 42
Hanoi 41
Modena 31
San Diego 31
Seoul 30
Buffalo 26
Sofia 24
Des Moines 23
Princeton 23
Munich 21
Bremen 20
Eugene 19
Helsinki 19
Izmir 18
Milan 17
Lauterbourg 16
São Paulo 16
Philadelphia 15
New York 14
Chicago 13
Moscow 13
Grafing 12
Shanghai 11
Brussels 10
Columbus 10
Phoenix 10
Da Nang 9
Solihull 9
Washington 9
Haiphong 8
Nanjing 8
Orem 8
Bolzano 7
Dallas 7
Falls Church 7
Guangzhou 7
Turku 7
Denver 6
Dublin 6
Naples 6
Redwood City 6
Salt Lake City 6
Auburn Hills 5
Boardman 5
Brantford 5
Hounslow 5
Reutlingen 5
Amsterdam 4
Atlanta 4
Charlotte 4
Elk Grove Village 4
Lancaster 4
Montreal 4
Nairobi 4
Sterling 4
Tampa 4
Tokyo 4
Toronto 4
Warsaw 4
Belo Horizonte 3
Biên Hòa 3
Bologna 3
Bắc Ninh 3
Can Tho 3
Chavannes 3
Delhi 3
Dubai 3
Forlì 3
Frankfurt am Main 3
Jakarta 3
Johannesburg 3
Kent 3
Kunming 3
Mexico City 3
Mumbai 3
Newark 3
Ninh Bình 3
Totale 4.617
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 431
Thermal desorption spectra from cavities in helium-implanted silicon 392
Vacancy-gettering in silicon: Cavities and helium-implantation 384
Helium-implanted silicon: A study of bubble precursors 379
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 367
Damage evolution in helium-hydrogen co-implanted (100) silicon 335
Copper–titanium thin film interaction 331
Hydrogen and helium bubbles in silicon 330
Transmission electron microscopy study of helium implanted silicon 325
Helium in silicon: Thermal-desorption investigation of bubble precursors 321
Visible luminescence from silicon by hydrogen implantation and annealing treatments 312
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 297
Visible photoluminescence from He‐implanted silicon 283
He-implantation induced defects in Si studied by slow positron annihilation spectroscopy 278
Transmission Electron Microscopy study of Helium Implanted Silicon 277
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 271
Early stages of bubble formation in helium-implated (100) silicon 266
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 232
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 163
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 160
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
ORDERING PROCESS IN TETRAGONAL YBCO DOPED WITH FE AND ZN 1
OXYGEN DISORDERING IN TETRAGONAL Y1BA2CU3O6+EPSILON - A TIME-DEPENDENT STUDY 1
Totale 6.141
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Categoria #
all - tutte 23.698
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 23.698
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022397 0 0 64 26 7 20 44 21 46 37 100 32
2022/2023481 47 65 26 33 74 95 3 48 51 5 11 23
2023/2024209 3 17 5 43 68 15 8 23 4 3 3 17
2024/2025937 32 5 6 84 160 132 59 82 118 13 117 129
2025/20261.548 78 64 149 128 233 137 205 63 164 143 122 62
2026/2027191 42 83 66 0 0 0 0 0 0 0 0 0
Totale 6.141