SERENI, GABRIELE

SERENI, GABRIELE  

Dipartimento di Scienze e Metodi dell'Ingegneria  

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Titolo Data di pubblicazione Autore(i) File
A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs 1-gen-2014 Sereni, Gabriele; Vandelli, ; L, .; Larcher, Luca; Morassi, ; L, .; Veksler, ; D, .; Bersuker,
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs 1-gen-2015 Sereni, Gabriele; Vandelli, Luca; Veksler, Dmitry; Larcher, Luca
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs 1-gen-2015 Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology 1-gen-2016 Larcher, Luca; Sereni, Gabriele; Vandelli, Luca
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 1-gen-2016 Larcher, Luca; Sereni, Gabriele; Padovani, Andrea; Vandelli, Luca
Extraction of interface and border traps in beyond-Si devices by accounting for generation and recombination in the semiconductor 1-gen-2015 Sereni, G.; Larcher, L.
Extraction of the Defect Distributions in DRAM Capacitor Using I-V and C-V Sensitivity Maps 1-gen-2016 Sereni, Gabriele; Larcher, Luca; Kaczer, Ben; Popovici, Mihaela Ioana
Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors 1-gen-2016 Popovici, Mihaela; Kaczer, Ben; Afanas'Ev, Valeri V.; Sereni, Gabriele; Larcher, Luca; Redolfi, Augusto; Van Elshocht, Sven; Jurczak, Malgorzata
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs 1-gen-2015 Sereni, G.; Vandelli, L.; Cavicchioli, R.; Larcher, L.; Veksler, D.; Bersuker, G.
Ultra-Low Power Displacement Sensor 1-gen-2020 Bertacchini, Alessandro; Lasagni, Marco; Sereni, Gabriele