statistiche ricercatore

Continente	#
NA - Nord America	1.372
AS - Asia	592
EU - Europa	400
SA - Sud America	69
AF - Africa	10
Continente sconosciuto - Info sul continente non disponibili	1
OC - Oceania	1
Totale	2.445

Nazione	#
US - Stati Uniti d'America	1.352
SG - Singapore	238
GB - Regno Unito	131
CN - Cina	130
HK - Hong Kong	77
VN - Vietnam	69
BR - Brasile	55
DE - Germania	50
IT - Italia	36
SE - Svezia	34
RU - Federazione Russa	29
FI - Finlandia	26
UA - Ucraina	25
FR - Francia	23
TR - Turchia	20
CA - Canada	14
IN - India	11
BG - Bulgaria	10
KR - Corea	9
PT - Portogallo	9
ID - Indonesia	7
NL - Olanda	7
EC - Ecuador	5
PL - Polonia	5
AR - Argentina	4
BD - Bangladesh	4
ES - Italia	4
MA - Marocco	4
PK - Pakistan	4
TH - Thailandia	4
IQ - Iraq	3
IR - Iran	3
JO - Giordania	3
MX - Messico	3
CH - Svizzera	2
CL - Cile	2
JM - Giamaica	2
JP - Giappone	2
RS - Serbia	2
TN - Tunisia	2
AE - Emirati Arabi Uniti	1
AT - Austria	1
AU - Australia	1
BA - Bosnia-Erzegovina	1
CO - Colombia	1
CZ - Repubblica Ceca	1
EE - Estonia	1
EG - Egitto	1
GP - Guadalupe	1
IE - Irlanda	1
IL - Israele	1
KE - Kenya	1
KZ - Kazakistan	1
MN - Mongolia	1
PH - Filippine	1
RE - Reunion	1
RO - Romania	1
SA - Arabia Saudita	1
SI - Slovenia	1
SY - Repubblica araba siriana	1
TW - Taiwan	1
UY - Uruguay	1
VE - Venezuela	1
XK - ???statistics.table.value.countryCode.XK???	1
ZA - Sudafrica	1
Totale	2.445

Nome	#
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology	302
Extraction of the Defect Distributions in DRAM Capacitor Using I-V and C-V Sensitivity Maps	290
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs	267
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs	263
A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs	257
Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors	239
Ultra-Low Power Displacement Sensor	230
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs	226
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology	215
Extraction of interface and border traps in beyond-Si devices by accounting for generation and recombination in the semiconductor	182
Totale	2.471

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	13	0	0	0	0	0	0	0	0	0	0	0	13
2021/2022	175	21	2	10	4	3	13	3	10	30	16	49	14
2022/2023	184	17	20	22	15	31	36	1	18	17	1	3	3
2023/2024	116	4	11	10	12	14	18	5	23	2	0	3	14
2024/2025	482	19	6	7	36	95	64	20	57	56	23	38	61
2025/2026	680	33	16	49	52	126	44	104	36	89	67	37	27
Totale													2.471