SERENI, GABRIELE
 Distribuzione geografica
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Continente #
NA - Nord America 922
EU - Europa 270
AS - Asia 115
OC - Oceania 1
SA - Sud America 1
Totale 1.309
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Nazione #
US - Stati Uniti d'America 918
GB - Regno Unito 103
DE - Germania 36
CN - Cina 35
SE - Svezia 33
SG - Singapore 33
IT - Italia 22
UA - Ucraina 22
HK - Hong Kong 20
FI - Finlandia 18
TR - Turchia 17
BG - Bulgaria 10
PT - Portogallo 9
FR - Francia 5
CA - Canada 4
ID - Indonesia 3
IR - Iran 3
RU - Federazione Russa 3
CH - Svizzera 2
NL - Olanda 2
PL - Polonia 2
AU - Australia 1
CL - Cile 1
IE - Irlanda 1
IN - India 1
JP - Giappone 1
KR - Corea 1
KZ - Kazakistan 1
RS - Serbia 1
SI - Slovenia 1
Totale 1.309
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Città #
Fairfield 165
Chandler 92
Ashburn 87
Southend 86
Woodbridge 80
Houston 71
Cambridge 58
Wilmington 56
Seattle 54
Dearborn 45
Nyköping 33
Ann Arbor 31
Jacksonville 23
Hong Kong 20
Singapore 16
Modena 13
Beijing 10
Helsinki 10
Princeton 10
Sofia 10
Eugene 9
Izmir 9
San Diego 9
London 7
Boardman 4
Dongguan 4
Hefei 4
Ardabil 3
Augusta 3
Kilburn 3
New York 3
Norwalk 3
Nürnberg 3
Ottawa 3
Redwood City 3
Saint Petersburg 3
Jakarta 2
Jinan 2
Santa Clara 2
Utrecht 2
Almaty 1
Belgrade 1
Bonne Terre 1
Bremen 1
Canberra 1
Chiswick 1
Concesio 1
Dallas 1
Dublin 1
Florence 1
Fremont 1
Fuzhou 1
Gdynia 1
Guangzhou 1
Hanover 1
Hounslow 1
Islington 1
Jiaxing 1
Leawood 1
Milan 1
Mumbai 1
Oklahoma City 1
Paris 1
Prescot 1
Saint Paul 1
San Mateo 1
Sassuolo 1
Shanghai 1
Southwark 1
Tokyo 1
Toronto 1
Turin 1
Verona 1
Warsaw 1
Zhengzhou 1
Totale 1.086
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Nome #
Extraction of the Defect Distributions in DRAM Capacitor Using I-V and C-V Sensitivity Maps 176
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 165
A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs 154
Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors 152
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs 150
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs 144
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs 124
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology 106
Ultra-Low Power Displacement Sensor 103
Extraction of interface and border traps in beyond-Si devices by accounting for generation and recombination in the semiconductor 61
Totale 1.335
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Categoria #
all - tutte 6.093
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.093
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020300 0 0 1 26 38 55 58 32 47 16 14 13
2020/2021255 23 12 12 23 17 22 16 42 20 25 30 13
2021/2022175 21 2 10 4 3 13 3 10 30 16 49 14
2022/2023184 17 20 22 15 31 36 1 18 17 1 3 3
2023/2024116 4 11 10 12 14 18 5 23 2 0 3 14
2024/202526 19 6 1 0 0 0 0 0 0 0 0 0
Totale 1.335