statistiche ricercatore

Continente	#
NA - Nord America	1.248
AS - Asia	435
EU - Europa	367
SA - Sud America	54
AF - Africa	6
Continente sconosciuto - Info sul continente non disponibili	1
OC - Oceania	1
Totale	2.112

Nazione	#
US - Stati Uniti d'America	1.237
SG - Singapore	179
GB - Regno Unito	129
CN - Cina	112
HK - Hong Kong	69
DE - Germania	49
BR - Brasile	44
SE - Svezia	34
VN - Vietnam	30
RU - Federazione Russa	28
FI - Finlandia	25
IT - Italia	25
UA - Ucraina	24
TR - Turchia	19
FR - Francia	11
BG - Bulgaria	10
PT - Portogallo	9
CA - Canada	6
NL - Olanda	6
EC - Ecuador	5
ID - Indonesia	5
PL - Polonia	5
IN - India	4
AR - Argentina	3
ES - Italia	3
IR - Iran	3
MA - Marocco	3
CH - Svizzera	2
IQ - Iraq	2
JM - Giamaica	2
JO - Giordania	2
JP - Giappone	2
KR - Corea	2
MX - Messico	2
AE - Emirati Arabi Uniti	1
AT - Austria	1
AU - Australia	1
BA - Bosnia-Erzegovina	1
BD - Bangladesh	1
CL - Cile	1
CZ - Repubblica Ceca	1
EE - Estonia	1
GP - Guadalupe	1
IE - Irlanda	1
IL - Israele	1
KE - Kenya	1
KZ - Kazakistan	1
PK - Pakistan	1
RE - Reunion	1
RS - Serbia	1
SA - Arabia Saudita	1
SI - Slovenia	1
UY - Uruguay	1
XK - ???statistics.table.value.countryCode.XK???	1
ZA - Sudafrica	1
Totale	2.112

Nome	#
Extraction of the Defect Distributions in DRAM Capacitor Using I-V and C-V Sensitivity Maps	264
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology	250
A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs	228
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs	226
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs	223
Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors	217
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs	200
Ultra-Low Power Displacement Sensor	193
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology	184
Extraction of interface and border traps in beyond-Si devices by accounting for generation and recombination in the semiconductor	153
Totale	2.138

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	146	0	0	0	0	0	0	16	42	20	25	30	13
2021/2022	175	21	2	10	4	3	13	3	10	30	16	49	14
2022/2023	184	17	20	22	15	31	36	1	18	17	1	3	3
2023/2024	116	4	11	10	12	14	18	5	23	2	0	3	14
2024/2025	482	19	6	7	36	95	64	20	57	56	23	38	61
2025/2026	347	33	16	49	52	126	44	27	0	0	0	0	0
Totale													2.138