statistiche ricercatore

Nome	#
Extraction of the Defect Distributions in DRAM Capacitor Using I-V and C-V Sensitivity Maps	186
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology	178
A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs	163
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs	161
Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors	160
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs	155
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs	133
Ultra-Low Power Displacement Sensor	117
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology	115
Extraction of interface and border traps in beyond-Si devices by accounting for generation and recombination in the semiconductor	70
Totale	1.438

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2019/2020	273	0	0	0	0	38	55	58	32	47	16	14	13
2020/2021	255	23	12	12	23	17	22	16	42	20	25	30	13
2021/2022	175	21	2	10	4	3	13	3	10	30	16	49	14
2022/2023	184	17	20	22	15	31	36	1	18	17	1	3	3
2023/2024	116	4	11	10	12	14	18	5	23	2	0	3	14
2024/2025	129	19	6	7	36	61	0	0	0	0	0	0	0
Totale													1.438