Sfoglia per Autore
Temperature impact on the reset operation in HfO2 RRAM
2015 Puglisi, Francesco Maria; Qafa, Altin; Pavan, Paolo
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory
2015 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control
2016 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise
2016 Puglisi, Francesco Maria; Costantini, Felipe; Kaczer, Ben; Larcher, Luca; Pavan, Paolo
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices
2016 Puglisi, Francesco Maria; Pavan, Paolo
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy
2016 Thamankar, R.; Raghavan, N.; Molina, J.; Puglisi, Francesco Maria; O'Shea, S. J.; Shubhakar, K.; Larcher, Luca; Pavan, Paolo; Padovani, Andrea; Pey, K. L.
2D h-BN based RRAM devices
2016 Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M.
Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices
2016 Puglisi, Francesco Maria
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study
2016 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Anomalous random telegraph noise and temporary phenomena in resistive random access memory
2016 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials
2016 Larcher, Luca; Puglisi, Francesco Maria; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling
2016 Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs
2016 Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory
2016 Puglisi, Francesco Maria; Pavan, Paolo
RTN Analysis as a Tool to Link Physical Device Characteristics to Electrical Reliability in Nanoscale Devices
2016 Puglisi, F. M.
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization
2016 Puglisi, Francesco Maria; Costantini, Felipe; Kaczer, Ben; Larcher, Luca; Pavan, Paolo
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials
2016 Larcher, Luca; Puglisi, Francesco Maria; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology
2016 Puglisi, Francesco Maria; Deleruyelle, Damien; Portal, Jean Michel; Pavan, Paolo; Larcher, Luca
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs
2017 Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective
2017 Zagni, Nicolò; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
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