Sfoglia per Autore
ELECTRON AND ION-BEAM ANALYSIS OF COMPOSITION AND STRAIN IN SI1-XGEX SI HETEROSTRUCTURES
1994 Armigliato, A; Govoni, D; Balboni, R; Frabboni, Stefano; Berti, M; Romanato, F; Drigo, Av
Influence of experimental parameters on the determination of tetragonal distortion in heterostructures by LACBED
1995 Armigliato, A; Balboni, R; Corticelli, F; Frabboni, Stefano
ANALYTICAL ELECTRON-MICROSCOPY OF SI1-XGEX/SI HETEROSTRUCTURES AND LOCAL ISOLATION STRUCTURES
1995 Armigliato, A; Balboni, R; Corticelli, F; Frabboni, Stefano; Malvezzi, F.
Hydrogen precipitation in highly oversaturated single-crystalline silicon
1995 Cerofolini, Gf; Balboni, R; Bisero, D; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Brusa, Rs; Zecca, A; Ceschini, M; Giebel, G; Pavesi, L.
Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections
1996 Balboni, R; Armigliato, A; Frabboni, Stefano
Transmission Electron diffraction techniques for nm scale measurement in semiconductors
1996 J., Vanhellemont; K. G. F., Janssens; Frabboni, Stefano; R., Balboni; A., Armigliato
Silicon interstitials generation during the exposure of silicon to hydrogen plasma
1996 Tonini, Rita; Monelli, A; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Queirolo, G.
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si
1996 Corni, Federico; Frabboni, Stefano; Tonini, Rita; Ottaviani, Giampiero; Queirolo, G.
Strain in silicon below Si3N4 stripes, comparison between SUPREM IV calculation and TEM/CBED measurements
1997 Armigliato, A; Balboni, R; Frabboni, Stefano; Tixier, A; Carnevale, Gp; Colpani, P; Marmiroli, A.
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen
1997 Frabboni, Stefano; Gambetta, F; Tonini, Rita; Balboni, R; Armigliato, A.
Strain measurements in thin film structures by convergent beam electron diffraction
1997 Armigliato, A; Balboni, R; Benedetti, A; Frabboni, Stefano; Tixier, A; Vanhellemont, J.
High-dose helium-implanted single-crystal silicon: Annealing behavior
1998 Tonini, Rita; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Cerofolini, G. F.
On the spatial resolution in analytical electron microscopy
1998 Armigliato, A; Howard, Dj; Balboni, R; Frabboni, Stefano; Caymax, Mr
Static disorder depth profile in ion implanted materials by means of large angle convergent beam electron diffraction
1998 Frabboni, Stefano; F., Gambetta
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films
1998 Corni, Federico; Frabboni, Stefano; Tonini, Rita; Leone, D; de Boer, W; Gasparotto, A.
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon
1998 D., Bisero; Corni, Federico; Frabboni, Stefano; Tonini, Rita; Ottaviani, Giampiero; R., Balboni
Determination of bulk mismatch values in transmission electron microscopy cross-sections of heterostructures by convergent-beam electron diffraction
1998 Balboni, R; Frabboni, Stefano; Armigliato, A.
Helium-implanted silicon: A study of bubble precursors
1999 Corni, Federico; Calzolari, G; Frabboni, Stefano; Nobili, Carlo Emanuele; Ottaviani, Giampiero; Tonini, Rita; Cerofolini, Gf; Leone, D; Servidori, M; Brusa, Rs; Karwasz, Gp; Tiengo, N; Zecca, A.
Strain determination in submicron isolation structures by TEM/CBED
1999 Armigliato, A; Balboni, R; Balboni, S; Frabboni, Stefano; Tixier, A; Carnevale, Gp; Colpani, P; Pavia, G; Marmiroli, A.
Influence of the first preparation steps on the properties of GaN layers grown on 6H-SiC by MBE
1999 Lantier, R; Rizzi, A; Guggi, D; Luth, H; Neubauer, B; Gerthsen, D; Frabboni, Stefano; Coli, G; Cingolani, R.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
ELECTRON AND ION-BEAM ANALYSIS OF COMPOSITION AND STRAIN IN SI1-XGEX SI HETEROSTRUCTURES | 1-gen-1994 | Armigliato, A; Govoni, D; Balboni, R; Frabboni, Stefano; Berti, M; Romanato, F; Drigo, Av | |
Influence of experimental parameters on the determination of tetragonal distortion in heterostructures by LACBED | 1-gen-1995 | Armigliato, A; Balboni, R; Corticelli, F; Frabboni, Stefano | |
ANALYTICAL ELECTRON-MICROSCOPY OF SI1-XGEX/SI HETEROSTRUCTURES AND LOCAL ISOLATION STRUCTURES | 1-gen-1995 | Armigliato, A; Balboni, R; Corticelli, F; Frabboni, Stefano; Malvezzi, F. | |
Hydrogen precipitation in highly oversaturated single-crystalline silicon | 1-gen-1995 | Cerofolini, Gf; Balboni, R; Bisero, D; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Brusa, Rs; Zecca, A; Ceschini, M; Giebel, G; Pavesi, L. | |
Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections | 1-gen-1996 | Balboni, R; Armigliato, A; Frabboni, Stefano | |
Transmission Electron diffraction techniques for nm scale measurement in semiconductors | 1-gen-1996 | J., Vanhellemont; K. G. F., Janssens; Frabboni, Stefano; R., Balboni; A., Armigliato | |
Silicon interstitials generation during the exposure of silicon to hydrogen plasma | 1-gen-1996 | Tonini, Rita; Monelli, A; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Queirolo, G. | |
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si | 1-gen-1996 | Corni, Federico; Frabboni, Stefano; Tonini, Rita; Ottaviani, Giampiero; Queirolo, G. | |
Strain in silicon below Si3N4 stripes, comparison between SUPREM IV calculation and TEM/CBED measurements | 1-gen-1997 | Armigliato, A; Balboni, R; Frabboni, Stefano; Tixier, A; Carnevale, Gp; Colpani, P; Marmiroli, A. | |
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen | 1-gen-1997 | Frabboni, Stefano; Gambetta, F; Tonini, Rita; Balboni, R; Armigliato, A. | |
Strain measurements in thin film structures by convergent beam electron diffraction | 1-gen-1997 | Armigliato, A; Balboni, R; Benedetti, A; Frabboni, Stefano; Tixier, A; Vanhellemont, J. | |
High-dose helium-implanted single-crystal silicon: Annealing behavior | 1-gen-1998 | Tonini, Rita; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Cerofolini, G. F. | |
On the spatial resolution in analytical electron microscopy | 1-gen-1998 | Armigliato, A; Howard, Dj; Balboni, R; Frabboni, Stefano; Caymax, Mr | |
Static disorder depth profile in ion implanted materials by means of large angle convergent beam electron diffraction | 1-gen-1998 | Frabboni, Stefano; F., Gambetta | |
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films | 1-gen-1998 | Corni, Federico; Frabboni, Stefano; Tonini, Rita; Leone, D; de Boer, W; Gasparotto, A. | |
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon | 1-gen-1998 | D., Bisero; Corni, Federico; Frabboni, Stefano; Tonini, Rita; Ottaviani, Giampiero; R., Balboni | |
Determination of bulk mismatch values in transmission electron microscopy cross-sections of heterostructures by convergent-beam electron diffraction | 1-gen-1998 | Balboni, R; Frabboni, Stefano; Armigliato, A. | |
Helium-implanted silicon: A study of bubble precursors | 1-gen-1999 | Corni, Federico; Calzolari, G; Frabboni, Stefano; Nobili, Carlo Emanuele; Ottaviani, Giampiero; Tonini, Rita; Cerofolini, Gf; Leone, D; Servidori, M; Brusa, Rs; Karwasz, Gp; Tiengo, N; Zecca, A. | |
Strain determination in submicron isolation structures by TEM/CBED | 1-gen-1999 | Armigliato, A; Balboni, R; Balboni, S; Frabboni, Stefano; Tixier, A; Carnevale, Gp; Colpani, P; Pavia, G; Marmiroli, A. | |
Influence of the first preparation steps on the properties of GaN layers grown on 6H-SiC by MBE | 1-gen-1999 | Lantier, R; Rizzi, A; Guggi, D; Luth, H; Neubauer, B; Gerthsen, D; Frabboni, Stefano; Coli, G; Cingolani, R. |
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