The convergent beam electron diffraction (CBED) technique in a transmission electron microscope (TEM) has been employed to determine the strain distribution along a cutline parallel to the padoxide/Si interface in a 0.80 mum wide recessed-LOGOS (LOCal Oxidation of Silicon) structure. The values of the components of the strain tensor so obtained have been compared with those computed by two process simulation codes. It has been found that both the LOGOS morphology and the strain distribution, experimentally determined, were in agreement with the simulation results, if some oxidation-related parameters were modified.
Strain determination in submicron isolation structures by TEM/CBED / Armigliato, A; Balboni, R; Balboni, S; Frabboni, Stefano; Tixier, A; Carnevale, Gp; Colpani, P; Pavia, G; Marmiroli, A.. - STAMPA. - 164:(1999), pp. 447-450. (Intervento presentato al convegno N/A tenutosi a N/A nel N/A).
Strain determination in submicron isolation structures by TEM/CBED
FRABBONI, Stefano;
1999
Abstract
The convergent beam electron diffraction (CBED) technique in a transmission electron microscope (TEM) has been employed to determine the strain distribution along a cutline parallel to the padoxide/Si interface in a 0.80 mum wide recessed-LOGOS (LOCal Oxidation of Silicon) structure. The values of the components of the strain tensor so obtained have been compared with those computed by two process simulation codes. It has been found that both the LOGOS morphology and the strain distribution, experimentally determined, were in agreement with the simulation results, if some oxidation-related parameters were modified.
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