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Modeling strategies for flash memory devices
2011 Padovani, Andrea; Larcher, Luca; Pavan, Paolo
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices
2011 Padovani, Andrea; Larcher, Luca; Vandelli, Luca; Pirrotta, Onofrio; Pavan, Paolo
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD
2017 Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.
Monte-Carlo Simulations of Flash Memory Array Retention
2007 Padovani, Andrea; Larcher, Luca; A., Chimenton; Pavan, Paolo
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices
2017 Padovani, Andrea; Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials
2016 Larcher, Luca; Puglisi, Francesco Maria; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials
2016 Larcher, Luca; Puglisi, Francesco Maria; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
Negative base current, impact-ionization and light emission phenomena in AlGaAs/GaAs HBT's
1992 E., Zanoni; R., Malik; J., Nagle; Pavan, Paolo; L., Vendrame; C., Canali
NROM™ - A new non-volatile memory technology: From device to products
2001 I., Bloom; Pavan, Paolo; B., Eitan
On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature
2010 G., Betti Beneventi; E., Gourvestzk; A., Fantini; L., Perniola; V., Sousa; S., Maitrejean; J. C., Bastien; A., Bastard; A., Fargeix; B., Hyot; C., Jahan; J. F., Nodin; A., Persico; D., Blachier; A., Toffoli; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Modeling strategies for flash memory devices | 1-gen-2011 | Padovani, Andrea; Larcher, Luca; Pavan, Paolo | |
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices | 1-gen-2011 | Padovani, Andrea; Larcher, Luca; Vandelli, Luca; Pirrotta, Onofrio; Pavan, Paolo | |
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD | 1-gen-2017 | Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G. | |
Monte-Carlo Simulations of Flash Memory Array Retention | 1-gen-2007 | Padovani, Andrea; Larcher, Luca; A., Chimenton; Pavan, Paolo | |
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices | 1-gen-2017 | Padovani, Andrea; Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo | |
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials | 1-gen-2016 | Larcher, Luca; Puglisi, Francesco Maria; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo | |
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials | 1-gen-2016 | Larcher, Luca; Puglisi, Francesco Maria; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo | |
Negative base current, impact-ionization and light emission phenomena in AlGaAs/GaAs HBT's | 1-gen-1992 | E., Zanoni; R., Malik; J., Nagle; Pavan, Paolo; L., Vendrame; C., Canali | |
NROM™ - A new non-volatile memory technology: From device to products | 1-gen-2001 | I., Bloom; Pavan, Paolo; B., Eitan | |
On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature | 1-gen-2010 | G., Betti Beneventi; E., Gourvestzk; A., Fantini; L., Perniola; V., Sousa; S., Maitrejean; J. C., Bastien; A., Bastard; A., Fargeix; B., Hyot; C., Jahan; J. F., Nodin; A., Persico; D., Blachier; A., Toffoli; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger |
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Opzioni
Scopri
Tipologia
- Atti di CONVEGNO 141
- Atti di CONVEGNO::Relazione in At... 141
Data di pubblicazione
- 2020 - 2023 17
- 2010 - 2019 59
- 2000 - 2009 41
- 1990 - 1999 24
Editore
- IEEE 50
- Institute of Electrical and Elect... 25
- Editions Frontieres 7
- IEEE Computer Society 7
- IEEE - Institute of Electrical a... 3
- IEEE - Institute of Electrical an... 3
- ASM International 2
- Computational Publications 2
- NSTI 2
- unknown 2
Rivista
- IEEE INTERNATIONAL RELIABILITY PH... 2
- ECS TRANSACTIONS 1
- JOURNAL OF THE ELECTROCHEMICAL SO... 1
- MICROELECTRONIC ENGINEERING 1
- PROCEEDINGS OF THE ... IEEE CONFE... 1
Serie
- IEEE INTERNATIONAL RELIABILITY PH... 17
- PROCEEDINGS OF THE EUROPEAN SOLID... 15
- PROCEEDINGS OF THE ANNUAL CONFERE... 5
- TECHNICAL DIGEST - INTERNATIONAL ... 3
- IEEE International Integrated Rel... 1
- IEEE MTT-S INTERNATIONAL MICROWAV... 1
- LECTURE NOTES OF THE INSTITUTE FO... 1
- PROCEEDINGS OF IEEE SENSORS ... 1
Keyword
- RRAM 19
- RTN 8
- Compact Model 5
- Defects 5
- logistics 5
- semiconductor device reliability 5
- Electrical and Electronic Enginee... 4
- Flash memories 4
- Flash memory 4
- HfO2 4
Lingua
- eng 141
Accesso al fulltext
- no fulltext 94
- reserved 41
- partially open 5
- open 1