NROM™ — a new NVM technology has recently been introduced, enabling three major improvements relative to the floating gate technology: one technology for all NVM products (Flash, EEPROM, ROM and Embedded), higher density (2.5F2 per bit in flash) and simple process with reduced number of masks without any exotic materials. The NROM™ cell is based on localized charge trapping above the junction edge, enabling physically separated two bits per cell. Performance of new NVM NROM™ based products show endurance up to 100 K with retention of 10 years at 150°C.

NROM – a new Non Volatile Memory Technology: from Device to Products / I., Bloom; Pavan, Paolo; B., Eitan. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - STAMPA. - 59 (1-4):(2001), pp. 213-224. ((Intervento presentato al convegno Insulating Films on Semiconductors tenutosi a Udine, I nel June 20-23, 2001 [10.1016/S0167-9317(01)00625-6].

NROM – a new Non Volatile Memory Technology: from Device to Products

PAVAN, Paolo;
2001-01-01

Abstract

NROM™ — a new NVM technology has recently been introduced, enabling three major improvements relative to the floating gate technology: one technology for all NVM products (Flash, EEPROM, ROM and Embedded), higher density (2.5F2 per bit in flash) and simple process with reduced number of masks without any exotic materials. The NROM™ cell is based on localized charge trapping above the junction edge, enabling physically separated two bits per cell. Performance of new NVM NROM™ based products show endurance up to 100 K with retention of 10 years at 150°C.
Insulating Films on Semiconductors
Udine, I
June 20-23, 2001
59 (1-4)
213
224
I., Bloom; Pavan, Paolo; B., Eitan
NROM – a new Non Volatile Memory Technology: from Device to Products / I., Bloom; Pavan, Paolo; B., Eitan. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - STAMPA. - 59 (1-4):(2001), pp. 213-224. ((Intervento presentato al convegno Insulating Films on Semiconductors tenutosi a Udine, I nel June 20-23, 2001 [10.1016/S0167-9317(01)00625-6].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/738264
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