Sfoglia per Autore  ESSENI, DAVID

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Mostrati risultati da 1 a 20 di 32
Titolo Data di pubblicazione Autore(i) File
Full Band and Approximated Solutions of the Schr\"odinger Equation in Silicon Inversion Layers 1-gen-2004 Esseni, David; Palestri, Pierpaolo
Effect of the Grid Size on the Stability of Self-Consistent Monte-Carlo Simulations 1-gen-2005 N., Barin; Palestri, Pierpaolo; Esseni, David; C., Fiegna
Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: A Monte Carlo Study 1-gen-2005 M., Braccioli; S., Eminente; Palestri, Pierpaolo; Esseni, David; C., Fiegna
Stability of Self-Consistent Monte-Carlo Simulations: Revised Analysis of Linear and Non-Linear Poisson Schemes 1-gen-2005 N., Barin; Palestri, Pierpaolo; Esseni, David; C., Fiegna
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 1-gen-2005 Esseni, David; Palestri, Pierpaolo
Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices 1-gen-2005 Esseni, David; Palestri, Pierpaolo
Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling Scheme 1-gen-2006 Palestri, Pierpaolo; N., Barin; Esseni, David; C., Fiegna
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 1-gen-2006 Palestri, Pierpaolo; Barin, N; Esseni, David; Fiegna, C.
Device Modeling 1-gen-2007 Esseni, David; Palestri, Pierpaolo; Sangiorgi, E.
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 1-gen-2008 Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 1-gen-2009 Esseni, David; Palestri, Pierpaolo
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 1-gen-2009 Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 1-gen-2010 Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 1-gen-2010 Paussa, Alan; Conzatti, Francesco; Breda, Dimitri; Vermiglio, Rossana; Esseni, David; Palestri, Pierpaolo
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 1-gen-2010 J. L. P. J., van der Steen; Palestri, Pierpaolo; Esseni, David; R. J. E., Hueting
Applicability of Macroscopic Transport Models to Decananometer MOSFETs 1-gen-2012 Vasicek, M; Cervenka, J; Esseni, David; Palestri, Pierpaolo; Grasser, P.
Mobility in FDSOI Devices: Monte Carlo and Kubo Greenwood Approaches Compared to NEGF Simulations 1-gen-2013 Rideau, D; Niquet, Y. M.; Nier, Oliver; Palestri, Pierpaolo; Esseni, David; Nguyen, V. H.; Triozon, F; Duchemin, I; Garetto, D; Smith, L; Silvestri, L; Nallet, F; Tavernier, C; Jaouen, H.
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 1-gen-2013 Smith, A. D.; Niklaus, F; Paussa, Alan; Vaziri, S; Fischer, A. C.; Sterner, M; Forsberg, M; Delin, A; Esseni, David; Palestri, Pierpaolo; Ostling, M; Lemme, M. C.
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives 1-gen-2013 D., Rideau; Y. M., Niquet; Nier, Oliver; A., Cros; J. P., Manceau; Palestri, Pierpaolo; Esseni, David; V. H., Nguyen; F., Triozon; J. C., Barbe; I., Duchemin; D., Garetto; L., Smith; L., Silvestri; F., Nallet; R., Clerc; O., Weber; F., Andrieu; E., Josse; C., Tavernier; H., Jaouen
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 1-gen-2015 Lanuzza, Marco; Strangio, Sebastiano; Crupi, Felice; Palestri, Pierpaolo; Esseni, David
Mostrati risultati da 1 a 20 di 32
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