STRAND, JACK WILLIAM
 Distribuzione geografica
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Continente #
EU - Europa 523
NA - Nord America 492
AS - Asia 70
OC - Oceania 2
Totale 1.087
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Nazione #
US - Stati Uniti d'America 492
IE - Irlanda 382
GB - Regno Unito 43
SE - Svezia 31
IT - Italia 29
HK - Hong Kong 28
CN - Cina 20
KR - Corea 13
DE - Germania 8
ES - Italia 7
BG - Bulgaria 5
NL - Olanda 5
AT - Austria 4
TW - Taiwan 4
FI - Finlandia 3
IN - India 3
RU - Federazione Russa 3
AU - Australia 2
BE - Belgio 2
JP - Giappone 1
LT - Lituania 1
SG - Singapore 1
Totale 1.087
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Città #
Dublin 381
Houston 223
Chandler 59
Ashburn 41
Fairfield 34
Hong Kong 28
Nyköping 27
Wilmington 15
London 11
Beijing 10
San Diego 9
Princeton 8
Bellaterra 7
Milan 7
Seattle 7
Ann Arbor 6
Chicago 6
Woodbridge 6
Amsterdam 5
Cambridge 5
Camden 5
Sofia 5
Dongjak-gu 3
Hounslow 3
Imola 3
Islington 3
Modena 3
Vienna 3
Berlin 2
Buk-gu 2
Chiswick 2
Essex Junction 2
Helsinki 2
Heverlee 2
Los Alamos 2
Mumbai 2
Munich 2
New York 2
Poplar 2
Songpa-gu 2
Taipei 2
Taoyuan District 2
Wollongong 2
Atlanta 1
Bologna 1
Bremen 1
Cesena 1
Crocetta del Montello 1
Dresden 1
Ferrara 1
Fremont 1
Galway 1
Guangzhou 1
Icheon-si 1
Jersey City 1
Kula 1
Lappeenranta 1
Leobendorf 1
Lund 1
Magenta 1
Monmouth Junction 1
New Delhi 1
Parma 1
Porto Mantovano 1
Pullach im Isartal 1
Reggio Emilia 1
Rome 1
Santa Barbara 1
Santa Clara 1
Seocho-gu 1
Tokyo 1
Treviso 1
Turin 1
Yongin-si 1
Yuhang 1
Totale 985
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Nome #
Electron trapping in ferroelectric HfO2 642
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films 94
Variability sources and reliability of 3D-FeFETs 62
Effect of electric field on defect generation and migration in HfO2 54
Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation 52
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents 49
Towards a Universal Model of Dielectric Breakdown 46
Properties of intrinsic point defects and dimers in hexagonal boron nitride 46
Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics 43
The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2O3 Layers 11
Totale 1.099
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Categoria #
all - tutte 4.606
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.606
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202132 0 0 0 0 1 22 0 2 2 0 5 0
2021/2022330 29 4 9 4 2 39 28 33 37 43 61 41
2022/2023414 41 61 40 38 20 25 43 36 27 13 34 36
2023/2024323 36 36 25 39 79 40 28 18 6 12 4 0
Totale 1.099