STRAND, JACK WILLIAM
 Distribuzione geografica
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Continente #
NA - Nord America 637
EU - Europa 561
AS - Asia 150
OC - Oceania 2
Totale 1.350
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Nazione #
US - Stati Uniti d'America 637
IE - Irlanda 383
SG - Singapore 46
IT - Italia 45
GB - Regno Unito 44
CN - Cina 40
SE - Svezia 31
HK - Hong Kong 28
KR - Corea 18
RU - Federazione Russa 12
DE - Germania 10
ES - Italia 7
TW - Taiwan 7
NL - Olanda 6
BE - Belgio 5
BG - Bulgaria 5
FI - Finlandia 5
IN - India 5
AT - Austria 4
ID - Indonesia 4
AU - Australia 2
FR - Francia 2
CZ - Repubblica Ceca 1
JP - Giappone 1
LT - Lituania 1
MY - Malesia 1
Totale 1.350
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Città #
Dublin 381
Houston 223
Santa Clara 134
Chandler 59
Ashburn 41
Singapore 40
Fairfield 34
Hong Kong 28
Nyköping 27
Wilmington 15
London 12
Beijing 10
San Diego 9
Princeton 8
Bellaterra 7
Milan 7
Seattle 7
Ann Arbor 6
Chicago 6
Woodbridge 6
Amsterdam 5
Boardman 5
Cambridge 5
Camden 5
Sofia 5
Guangzhou 4
Jakarta 4
Moscow 4
Shanghai 4
Dongjak-gu 3
Helsinki 3
Hounslow 3
Imola 3
Islington 3
Modena 3
Munich 3
Parma 3
Reggio Emilia 3
Taoyuan District 3
Vienna 3
Berlin 2
Buk-gu 2
Chiswick 2
Essex Junction 2
Heverlee 2
Hyderabad 2
Los Alamos 2
Mumbai 2
Neuilly-Plaisance 2
New York 2
Osan 2
Poplar 2
Riese Pio X 2
Rimini 2
Rome 2
Songpa-gu 2
Suwon 2
Taipei 2
Wollongong 2
Zibido San Giacomo 2
Atlanta 1
Bologna 1
Bremen 1
Brussels 1
Cesena 1
Cheongju-si 1
Cork 1
Crocetta del Montello 1
Dresden 1
Ferrara 1
Frankfurt am Main 1
Fremont 1
Fuzhou 1
Galway 1
George Town 1
Icheon-si 1
Jersey City 1
Kula 1
Lappeenranta 1
Leobendorf 1
Los Angeles 1
Lund 1
Magenta 1
Monmouth Junction 1
New Delhi 1
Porto Mantovano 1
Pullach im Isartal 1
Ravenna 1
Santa Barbara 1
Seocho-gu 1
Tokyo 1
Treviso 1
Turin 1
Yongin-si 1
Yuhang 1
Totale 1.209
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Nome #
Electron trapping in ferroelectric HfO2 662
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films 117
Variability sources and reliability of 3D-FeFETs 81
Towards a Universal Model of Dielectric Breakdown 75
Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation 73
Effect of electric field on defect generation and migration in HfO2 72
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents 68
Properties of intrinsic point defects and dimers in hexagonal boron nitride 67
Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics 66
Dielectric breakdown of oxide films in electronic devices 52
The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2O3 Layers 30
Totale 1.363
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Categoria #
all - tutte 6.069
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.069
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202132 0 0 0 0 1 22 0 2 2 0 5 0
2021/2022330 29 4 9 4 2 39 28 33 37 43 61 41
2022/2023414 41 61 40 38 20 25 43 36 27 13 34 36
2023/2024346 36 36 25 39 79 40 28 18 6 12 4 23
2024/2025241 10 5 16 37 109 63 1 0 0 0 0 0
Totale 1.363