STRAND, JACK WILLIAM
STRAND, JACK WILLIAM
Dipartimento di Scienze e Metodi dell'Ingegneria
Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation
2022 Strand, Jack; La Torraca, Paolo; Padovani, Andrea; Larcher, Luca; Shluger, Alexander L.
Dielectric breakdown of oxide films in electronic devices
2024 Padovani, Andrea; La Torraca, Paolo; Strand, Jack; Larcher, Luca; Shluger, Alexander L.
Effect of electric field on defect generation and migration in HfO2
2020 Strand, J. W.; Cottom, J.; Larcher, L.; Shluger, A. L.
Electron trapping in ferroelectric HfO2
2021 Izmailov, R. A.; Strand, J. W.; Larcher, L.; O'Sullivan, B. J.; Shluger, A. L.; Afanas'Ev, V. V.
Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics
2023 Padovani, Andrea; Torraca, Paolo La; Larcher, Luca; Strand, Jack; Shluger, Alexander
Properties of intrinsic point defects and dimers in hexagonal boron nitride
2020 Strand, J.; Larcher, L.; Shluger, A. L.
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films
2018 Gao, D. Z.; Strand, J.; El-Sayed, A. -M.; Shluger, A. L.; Padovani, A.; Larcher, L.
The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2O3 Layers
2024 La Torraca, P.; Padovani, A.; Strand, J.; Shluger, A.; Larcher, L.
Towards a Universal Model of Dielectric Breakdown
2023 Padovani, Andrea; Torraca, Paolo La; Strand, Jack; Shluger, Alexander; Milo, Valerio; Larcher, Luca
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents
2022 Pesic, M.; Padovani, A.; Rollo, T.; Beltrando, B.; Strand, J.; Agrawal, P.; Shluger, A.; Larcher, L.
Variability sources and reliability of 3D-FeFETs
2021 Pesic, M.; Beltrando, B.; Padovani, A.; Gangopadhyay, S.; Kaliappan, M.; Haverty, M.; Villena, M. A.; Piccinini, E.; Bertocchi, M.; Chiang, T.; Larcher, L.; Strand, J.; Shluger, A. L.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation | 1-gen-2022 | Strand, Jack; La Torraca, Paolo; Padovani, Andrea; Larcher, Luca; Shluger, Alexander L. | |
| Dielectric breakdown of oxide films in electronic devices | 1-gen-2024 | Padovani, Andrea; La Torraca, Paolo; Strand, Jack; Larcher, Luca; Shluger, Alexander L. | |
| Effect of electric field on defect generation and migration in HfO2 | 1-gen-2020 | Strand, J. W.; Cottom, J.; Larcher, L.; Shluger, A. L. | |
| Electron trapping in ferroelectric HfO2 | 1-gen-2021 | Izmailov, R. A.; Strand, J. W.; Larcher, L.; O'Sullivan, B. J.; Shluger, A. L.; Afanas'Ev, V. V. | |
| Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics | 1-gen-2023 | Padovani, Andrea; Torraca, Paolo La; Larcher, Luca; Strand, Jack; Shluger, Alexander | |
| Properties of intrinsic point defects and dimers in hexagonal boron nitride | 1-gen-2020 | Strand, J.; Larcher, L.; Shluger, A. L. | |
| Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films | 1-gen-2018 | Gao, D. Z.; Strand, J.; El-Sayed, A. -M.; Shluger, A. L.; Padovani, A.; Larcher, L. | |
| The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2O3 Layers | 1-gen-2024 | La Torraca, P.; Padovani, A.; Strand, J.; Shluger, A.; Larcher, L. | |
| Towards a Universal Model of Dielectric Breakdown | 1-gen-2023 | Padovani, Andrea; Torraca, Paolo La; Strand, Jack; Shluger, Alexander; Milo, Valerio; Larcher, Luca | |
| Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents | 1-gen-2022 | Pesic, M.; Padovani, A.; Rollo, T.; Beltrando, B.; Strand, J.; Agrawal, P.; Shluger, A.; Larcher, L. | |
| Variability sources and reliability of 3D-FeFETs | 1-gen-2021 | Pesic, M.; Beltrando, B.; Padovani, A.; Gangopadhyay, S.; Kaliappan, M.; Haverty, M.; Villena, M. A.; Piccinini, E.; Bertocchi, M.; Chiang, T.; Larcher, L.; Strand, J.; Shluger, A. L. |