statistiche ricercatore

Continente	#
NA - Nord America	1.174
AS - Asia	1.090
EU - Europa	503
SA - Sud America	126
Continente sconosciuto - Info sul continente non disponibili	21
AF - Africa	12
OC - Oceania	1
Totale	2.927

Nazione	#
US - Stati Uniti d'America	1.132
CN - Cina	380
SG - Singapore	326
IT - Italia	183
HK - Hong Kong	107
VN - Vietnam	90
BR - Brasile	84
KR - Corea	67
DE - Germania	62
FR - Francia	52
GB - Regno Unito	49
BD - Bangladesh	45
FI - Finlandia	41
RU - Federazione Russa	28
BE - Belgio	25
CA - Canada	25
AR - Argentina	16
ID - Indonesia	15
TW - Taiwan	15
NL - Olanda	12
AT - Austria	11
SE - Svezia	9
ES - Italia	8
IN - India	8
JP - Giappone	8
CO - Colombia	7
EC - Ecuador	7
IQ - Iraq	7
MX - Messico	6
CL - Cile	5
LT - Lituania	5
MY - Malesia	5
RO - Romania	5
PK - Pakistan	4
PL - Polonia	4
ZA - Sudafrica	4
PH - Filippine	3
PY - Paraguay	3
AE - Emirati Arabi Uniti	2
CR - Costa Rica	2
IE - Irlanda	2
KE - Kenya	2
MA - Marocco	2
NP - Nepal	2
PR - Porto Rico	2
AZ - Azerbaigian	1
BA - Bosnia-Erzegovina	1
BG - Bulgaria	1
BO - Bolivia	1
CG - Congo	1
CZ - Repubblica Ceca	1
DK - Danimarca	1
DZ - Algeria	1
EE - Estonia	1
GP - Guadalupe	1
GT - Guatemala	1
HN - Honduras	1
JM - Giamaica	1
KZ - Kazakistan	1
MN - Mongolia	1
NI - Nicaragua	1
NZ - Nuova Zelanda	1
OM - Oman	1
PE - Perù	1
RS - Serbia	1
SC - Seychelles	1
SK - Slovacchia (Repubblica Slovacca)	1
SR - Suriname	1
TH - Thailandia	1
TN - Tunisia	1
TR - Turchia	1
TT - Trinidad e Tobago	1
UY - Uruguay	1
VC - Saint Vincent e Grenadine	1
XK - ???statistics.table.value.countryCode.XK???	1
Totale	2.907

Nome	#
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging	349
Il ruolo della carica intrappolata sull’affidabilità e la degradazione negli ossidi	279
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks	271
The Impact of Electrostatic Interactions between Defects on the Characteristics of Random Telegraph Noise	217
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena	216
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs	213
Evaluation of Imprint and Multi-Level Dynamics in Ferroelectric Capacitors	211
Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions	206
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide	192
Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals	191
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by means of Impedance Spectroscopy	178
A Novel D2 Plasma Treatment for Defect Passivation: From Modeling to Process Optimization	150
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation	142
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability	112
Totale	2.927

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2022/2023	44	0	0	0	2	4	4	2	3	4	2	8	15
2023/2024	197	10	9	14	21	24	4	23	23	6	2	12	49
2024/2025	778	33	15	21	54	87	103	50	34	71	45	136	129
2025/2026	1.352	136	126	127	113	181	72	153	41	134	132	85	52
2026/2027	556	91	245	67	153	0	0	0	0	0	0	0	0
Totale													2.927