statistiche ricercatore

Nome	#
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena	36
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging	34
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by means of Impedance Spectroscopy	31
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs	30
Il ruolo della carica intrappolata sull’affidabilità e la degradazione negli ossidi	30
Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals	26
Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions	25
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide	22
The Impact of Electrostatic Interactions between Defects on the Characteristics of Random Telegraph Noise	17
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation	10
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks	5
Totale	266

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2022/2023	44	0	0	0	2	4	4	2	3	4	2	8	15
2023/2024	197	10	9	14	21	24	4	23	23	6	2	12	49
2024/2025	25	25	0	0	0	0	0	0	0	0	0	0	0
Totale													266