statistiche ricercatore

Continente	#
AS - Asia	1.077
NA - Nord America	897
EU - Europa	475
SA - Sud America	123
Continente sconosciuto - Info sul continente non disponibili	21
AF - Africa	11
Totale	2.604

Nazione	#
US - Stati Uniti d'America	868
CN - Cina	378
SG - Singapore	317
IT - Italia	171
HK - Hong Kong	107
VN - Vietnam	90
BR - Brasile	82
KR - Corea	67
DE - Germania	59
GB - Regno Unito	49
FR - Francia	48
BD - Bangladesh	44
FI - Finlandia	41
RU - Federazione Russa	27
BE - Belgio	23
CA - Canada	19
AR - Argentina	16
ID - Indonesia	15
TW - Taiwan	15
NL - Olanda	12
AT - Austria	11
SE - Svezia	9
ES - Italia	8
IN - India	8
CO - Colombia	7
EC - Ecuador	7
IQ - Iraq	7
JP - Giappone	7
MX - Messico	6
CL - Cile	5
LT - Lituania	5
MY - Malesia	5
PK - Pakistan	4
PL - Polonia	4
ZA - Sudafrica	4
PH - Filippine	3
PY - Paraguay	3
RO - Romania	3
AE - Emirati Arabi Uniti	2
CR - Costa Rica	2
IE - Irlanda	2
KE - Kenya	2
MA - Marocco	2
NP - Nepal	2
AZ - Azerbaigian	1
BA - Bosnia-Erzegovina	1
BO - Bolivia	1
CG - Congo	1
CZ - Repubblica Ceca	1
DZ - Algeria	1
HN - Honduras	1
KZ - Kazakistan	1
MN - Mongolia	1
OM - Oman	1
PE - Perù	1
SK - Slovacchia (Repubblica Slovacca)	1
TH - Thailandia	1
TN - Tunisia	1
TR - Turchia	1
TT - Trinidad e Tobago	1
UY - Uruguay	1
XK - ???statistics.table.value.countryCode.XK???	1
Totale	2.584

Nome	#
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging	305
Il ruolo della carica intrappolata sull’affidabilità e la degradazione negli ossidi	246
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks	237
Evaluation of Imprint and Multi-Level Dynamics in Ferroelectric Capacitors	196
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena	195
Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions	192
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs	186
The Impact of Electrostatic Interactions between Defects on the Characteristics of Random Telegraph Noise	179
Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals	169
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide	168
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by means of Impedance Spectroscopy	167
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation	130
A Novel D2 Plasma Treatment for Defect Passivation: From Modeling to Process Optimization	127
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability	107
Totale	2.604

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2022/2023	44	0	0	0	2	4	4	2	3	4	2	8	15
2023/2024	197	10	9	14	21	24	4	23	23	6	2	12	49
2024/2025	778	33	15	21	54	87	103	50	34	71	45	136	129
2025/2026	1.352	136	126	127	113	181	72	153	41	134	132	85	52
2026/2027	233	91	142	0	0	0	0	0	0	0	0	0	0
Totale													2.604