statistiche ricercatore

Nome	#
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena	55
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging	54
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs	51
Il ruolo della carica intrappolata sull’affidabilità e la degradazione negli ossidi	51
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by means of Impedance Spectroscopy	50
Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals	45
Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions	45
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide	40
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks	35
The Impact of Electrostatic Interactions between Defects on the Characteristics of Random Telegraph Noise	35
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation	31
Evaluation of Imprint and Multi-Level Dynamics in Ferroelectric Capacitors	26
Totale	518

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2022/2023	44	0	0	0	2	4	4	2	3	4	2	8	15
2023/2024	197	10	9	14	21	24	4	23	23	6	2	12	49
2024/2025	277	33	15	21	54	87	67	0	0	0	0	0	0
Totale													518