VECCHI, SARA

VECCHI, SARA  

Dipartimento di Ingegneria "Enzo Ferrari"  

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Titolo Data di pubblicazione Autore(i) File
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs 1-gen-2023 Vecchi, S.; Pavan, P.; Puglisi, F. M.
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide 1-gen-2022 Vecchi, S.; Pavan, P.; Puglisi, F. M.
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks 1-gen-2024 Vecchi, S.; Padovani, A.; Pavan, P.; Puglisi, F. M.
Il ruolo della carica intrappolata sull’affidabilità e la degradazione negli ossidi 10-apr-2024 Vecchi, Sara
Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions 1-gen-2022 Benatti, L.; Vecchi, S.; Puglisi, F. M.
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by means of Impedance Spectroscopy 1-gen-2023 Benatti, L.; Vecchi, S.; Puglisi, F. M.
Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals 1-gen-2023 Vecchi, S.; Pavan, P.; Puglisi, F. M.
The Impact of Electrostatic Interactions between Defects on the Characteristics of Random Telegraph Noise 1-gen-2022 Vecchi, S.; Pavan, P.; Puglisi, F. M.
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation 1-gen-2023 Vecchi, Sara; Padovani, Andrea; Pavan, Paolo; Puglisi, Francesco Maria
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena 1-gen-2022 Vecchi, S.; Pavan, P.; Puglisi, F. M.
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging 1-gen-2023 Benatti, L.; Vecchi, S.; Pesic, M.; Puglisi, F. M.