In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Forming set and reset processes are studied using a model including power dissipation associated with the charge transport, and the corresponding temperature increase, which assists ion diffusion.
Microscopic understanding and modeling of HfO2 RRAM device physics / Larcher, L., Padovani, A., Pirrotta, O., Vandelli, L., G., B.. - ELETTRONICO. - (2012), pp. 20.1.1-20.1.4. (2012 IEEE International Electron Devices Meeting, IEDM 2012 San Francisco, CA, USA 10-12 Dicembre 2012) [10.1109/IEDM.2012.6479077].
Microscopic understanding and modeling of HfO2 RRAM device physics
LARCHER, Luca;PADOVANI, ANDREA;PIRROTTA, Onofrio;VANDELLI, LUCA;
2012
Abstract
In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Forming set and reset processes are studied using a model including power dissipation associated with the charge transport, and the corresponding temperature increase, which assists ion diffusion.
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