We report on novel, high voltage InGaAs-InAlAs pHEMTs, which have been processed on an optimized epilayer and incorporate field-plate structures of different dimensions. Fabricated devices demonstrate great improvements in break-down voltage and gate leakage, while keeping the same DC and RF behaviour with respect to baseline devices, i.e. with no field-plate implemented. In addition, the field plate strongly attenuates DC-to-pulse dispersion, making these devices suitable for high-power-density RF power amplifiers.
Improvement of breakdown and DC-to-pulse dispersion properties in field-plated InGaAs-InAlAs pHEMTs / Saguatti, D., M., M.I., K. W., I., Chini, A., Verzellesi, G., Fantini, F., M., M.. - STAMPA. - (2011), pp. 84-86. (23rd International Conference on Indium Phospide and Related Materials Berlin (Germany) 22-26 May 2011).
Improvement of breakdown and DC-to-pulse dispersion properties in field-plated InGaAs-InAlAs pHEMTs
SAGUATTI, Davide;CHINI, Alessandro;VERZELLESI, Giovanni;FANTINI, Fausto;
2011
Abstract
We report on novel, high voltage InGaAs-InAlAs pHEMTs, which have been processed on an optimized epilayer and incorporate field-plate structures of different dimensions. Fabricated devices demonstrate great improvements in break-down voltage and gate leakage, while keeping the same DC and RF behaviour with respect to baseline devices, i.e. with no field-plate implemented. In addition, the field plate strongly attenuates DC-to-pulse dispersion, making these devices suitable for high-power-density RF power amplifiers.
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