In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices.

Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices / Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo. - ELETTRONICO. - 1:(2011), pp. 17.5.1-17.5.4. (Intervento presentato al convegno 2011 IEEE International Electron Devices Meeting, IEDM 2011 tenutosi a Washington, DC, usa nel 5-7 December 2011) [10.1109/IEDM.2011.6131574].

Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices

VANDELLI, LUCA;PADOVANI, ANDREA;LARCHER, Luca;MONTORSI, Monia;PAVAN, Paolo
2011

Abstract

In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices.
2011
2011 IEEE International Electron Devices Meeting, IEDM 2011
Washington, DC, usa
5-7 December 2011
1
17.5.1
17.5.4
Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices / Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo. - ELETTRONICO. - 1:(2011), pp. 17.5.1-17.5.4. (Intervento presentato al convegno 2011 IEEE International Electron Devices Meeting, IEDM 2011 tenutosi a Washington, DC, usa nel 5-7 December 2011) [10.1109/IEDM.2011.6131574].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/703863
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