Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for designing non-volatile Logic-in-Memory (LIM) architectures. This work explores a smart material implication (SIMPLY) LIM scheme based on nanoscale STT-MTJs. The SIMPLY architecture is benchmarked against the conventional material implication (IMPLY) logic. Obtained results prove that for similar performance the STT-MTJ based SIMPLY scheme ensures more reliable operation (i.e., lower error rate by more than three orders of magnitude) and an energy saving of -70% than its IMPLY counterpart, at the only cost of minimal area overhead.
STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing / De Rose, Raffaele; Zanotti, Tommaso; Maria Puglisi, Francesco; Crupi, Felice; Pavan, Paolo; Lanuzza, Marco. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - (2021), pp. 108065-108069. [10.1016/j.sse.2021.108065]