Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.
Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon / Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 123:21(2018), pp. 1-7.
Data di pubblicazione: | 2018 |
Data di prima pubblicazione: | 31-mag-2018 |
Titolo: | Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon |
Autore/i: | Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca |
Autore/i UNIMORE: | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.5026124 |
Rivista: | |
Volume: | 123 |
Fascicolo: | 21 |
Pagina iniziale: | 1 |
Pagina finale: | 7 |
Codice identificativo ISI: | WOS:000434775500028 |
Codice identificativo Scopus: | 2-s2.0-85048041809 |
Citazione: | Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon / Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 123:21(2018), pp. 1-7. |
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