Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances
2000 Regis, M.; Flotats, E.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R.
Design of RFICs in 0.35μm Si/SiGe BiCMOS technology for a 5GHz domotic transmitter
2005 Alimenti, F.; Borgarino, M.; Codeluppi, R.; Palazzari, V.; Pifferi, M.; Roselli, L.; Scorzoni, A.; Fantini, F.
Study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress
1997 Borgarino, M.; Menozzi, R.; Tasselli, J.; Marty, A.; Fantini, F.
Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs
1998 Borgarino, M.; Plana, R.; Tartarin, J. G.; Graffeuil, J.; Fantini, F.; Delage, S.
SiGe technologies for the new information society
2000 Regis, M.; Bary, L.; Coustou, A.; Sadowy, J.; Tournier, E.; Borgarino, M.; Llopis, O.; Grafeuil, J.; Plana, R.
Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors
2000 Borgarino, M.; Bary, L.; Kuchenbecker, J.; Tartarin, J. G.; Lafontaine, H.; Kovacic, T.; Plana, R.; Graffeuil, J.; Fantini, F.
Non-linear noise mechanisms in SiGe BiCMOS devices
2000 Regis, M.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R.
Effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs
1997 Menozzi, R.; Borgarino, M.; Baeyens, Y.; Van Der Zanden, K.; Van Hove, M.; Fantini, F.
Design of RFICs in 0.35μm Si/SiGe BiCMOS technology for a 5 GHz domotic transmitter
2005 Alimenti, F.; Borgarino, M.; Codeluppi, R.; Palazzari, V.; Pifferi, M.; Roselli, L.; Scorzoni, A.; Fantini, F.
SiGe bipolar technologies for low phase noise RF and microwave applications
2000 Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.
SiGe bipolar technologies for low phase noise RF and microwave applications (invited)
2000 Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.
On the stability of the DC and RF gain of GaInP/GaAs HBTs
1996 Borgarino, M.; Plana, R.; Tartarin, J. G.; Delage, S.; Blanck, H.; Fantini, F.; Graffeuil, J.
Excess noise modelling of SiGe BicMOS devices
2000 Ibarra, J.; Vescovi, D.; Bary, L.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Graffeuil, J.; Plana, R.
Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs
1997 Borgarino, M.; Tartarin, J. G.; Delage, S.; Plana, R.; Fantini, F.; Graffeuil, J.
Cathodoluminescence investigation of stress-induced Berillium outdiffusion in AlGaAs/GaAs HBTs
1997 Cattani, Laura; Salviati, Giancarlo; Borgarino, Mattia; Menozzi, Roberto; Fantini, Fausto; Lazzarini, Laura; Fregonara Carlo, Zanotti
Repetitive control of nonlinear systems via feedback linearization: An application to robotics
2020 Biagiotti, L.
Mobility-aware coded storage and delivery
2018 Ozfatura, E.; Gunduz, D.
Grain size and grain size distibution of zro<>2<>:Pr ceramics nanopowders determined by different methods
2009 Opalinska, A.; Pielaszek, R.; Lojkowski, W.; Leonelli, C.; Matysiak, H.; Wejrzanowski, T.; Kurzydlowski, K. J.
Thermal behaviour of geopolymer materials: Influence of temperature on mineralogical composition and microstructure of sodium-potassium polysialates
2008 Kamseu, E.; Leonelli, C.; Sglavo, V. M.
Synthesis of binary and ternary semiconductors by means of microwave irradiation
2007 Rizzuti, A.; Leonelli, C.; Sentimenti, E.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances | 1-gen-2000 | Regis, M.; Flotats, E.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R. | |
| Design of RFICs in 0.35μm Si/SiGe BiCMOS technology for a 5GHz domotic transmitter | 1-gen-2005 | Alimenti, F.; Borgarino, M.; Codeluppi, R.; Palazzari, V.; Pifferi, M.; Roselli, L.; Scorzoni, A.; Fantini, F. | |
| Study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress | 1-gen-1997 | Borgarino, M.; Menozzi, R.; Tasselli, J.; Marty, A.; Fantini, F. | |
| Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs | 1-gen-1998 | Borgarino, M.; Plana, R.; Tartarin, J. G.; Graffeuil, J.; Fantini, F.; Delage, S. | |
| SiGe technologies for the new information society | 1-gen-2000 | Regis, M.; Bary, L.; Coustou, A.; Sadowy, J.; Tournier, E.; Borgarino, M.; Llopis, O.; Grafeuil, J.; Plana, R. | |
| Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors | 1-gen-2000 | Borgarino, M.; Bary, L.; Kuchenbecker, J.; Tartarin, J. G.; Lafontaine, H.; Kovacic, T.; Plana, R.; Graffeuil, J.; Fantini, F. | |
| Non-linear noise mechanisms in SiGe BiCMOS devices | 1-gen-2000 | Regis, M.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R. | |
| Effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs | 1-gen-1997 | Menozzi, R.; Borgarino, M.; Baeyens, Y.; Van Der Zanden, K.; Van Hove, M.; Fantini, F. | |
| Design of RFICs in 0.35μm Si/SiGe BiCMOS technology for a 5 GHz domotic transmitter | 1-gen-2005 | Alimenti, F.; Borgarino, M.; Codeluppi, R.; Palazzari, V.; Pifferi, M.; Roselli, L.; Scorzoni, A.; Fantini, F. | |
| SiGe bipolar technologies for low phase noise RF and microwave applications | 1-gen-2000 | Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R. | |
| SiGe bipolar technologies for low phase noise RF and microwave applications (invited) | 1-gen-2000 | Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R. | |
| On the stability of the DC and RF gain of GaInP/GaAs HBTs | 1-gen-1996 | Borgarino, M.; Plana, R.; Tartarin, J. G.; Delage, S.; Blanck, H.; Fantini, F.; Graffeuil, J. | |
| Excess noise modelling of SiGe BicMOS devices | 1-gen-2000 | Ibarra, J.; Vescovi, D.; Bary, L.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Graffeuil, J.; Plana, R. | |
| Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs | 1-gen-1997 | Borgarino, M.; Tartarin, J. G.; Delage, S.; Plana, R.; Fantini, F.; Graffeuil, J. | |
| Cathodoluminescence investigation of stress-induced Berillium outdiffusion in AlGaAs/GaAs HBTs | 1-gen-1997 | Cattani, Laura; Salviati, Giancarlo; Borgarino, Mattia; Menozzi, Roberto; Fantini, Fausto; Lazzarini, Laura; Fregonara Carlo, Zanotti | |
| Repetitive control of nonlinear systems via feedback linearization: An application to robotics | 1-gen-2020 | Biagiotti, L. | |
| Mobility-aware coded storage and delivery | 1-gen-2018 | Ozfatura, E.; Gunduz, D. | |
| Grain size and grain size distibution of zro<>2<>:Pr ceramics nanopowders determined by different methods | 1-gen-2009 | Opalinska, A.; Pielaszek, R.; Lojkowski, W.; Leonelli, C.; Matysiak, H.; Wejrzanowski, T.; Kurzydlowski, K. J. | |
| Thermal behaviour of geopolymer materials: Influence of temperature on mineralogical composition and microstructure of sodium-potassium polysialates | 1-gen-2008 | Kamseu, E.; Leonelli, C.; Sglavo, V. M. | |
| Synthesis of binary and ternary semiconductors by means of microwave irradiation | 1-gen-2007 | Rizzuti, A.; Leonelli, C.; Sentimenti, E. |
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