The voltage-current DC punch-through characteristics have been studied for FOXFETs with different channel width/length ratios, fabricated on Si substrates with different doping levels. The punch-through threshold voltage depends on the positive charge in the gate oxide, device layout and temperature. The relation between punch-through current and dynamic resistance is insensitive to charge accumulation in the gate oxide induced by irradiation and to different Si donor doping level. Dynamic resistance however varies as the doping changes from n- to p-type, and it also depends on the Si bulk damage induced by neutron irradiation.
Punch-through behaviour of FOXFET biased detectors / Bacchetta, N.; Bisello, D.; Da Ros, R.; Giraldo, A.; Gotra, Yu.; Paccagnella, A.; Verzellesi, G.. - 1(1994), pp. 53-57. (Intervento presentato al convegno Proceedings of the 1993 IEEE Nuclear Science Symposium & Medical Imaging Conference tenutosi a San Francisco, CA, USA, nel 1993).
Punch-through behaviour of FOXFET biased detectors
Verzellesi G.
1994
Abstract
The voltage-current DC punch-through characteristics have been studied for FOXFETs with different channel width/length ratios, fabricated on Si substrates with different doping levels. The punch-through threshold voltage depends on the positive charge in the gate oxide, device layout and temperature. The relation between punch-through current and dynamic resistance is insensitive to charge accumulation in the gate oxide induced by irradiation and to different Si donor doping level. Dynamic resistance however varies as the doping changes from n- to p-type, and it also depends on the Si bulk damage induced by neutron irradiation.
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