A numerical model for the solution of semiconductor-device equations in the presence of an optical-generation effect is presented. This model, developed as a part of the general-purpose semiconductor-device analysis program HFIELDS, is to be applied to the analysis of optical sensors used in semiconductor integrated imagers. Preliminary theoretical results on CMOS-compatible photodiodes are presented and compared with experiments.
On the electro-optical characteristics of CMOS compatible photodiodes / Soncini, G.; Zen, M.; Rudan, M.; Verzellesi, G.. - (1992), pp. 111-113. (Intervento presentato al convegno Proceedings of the 6th Mediterranean Electrotechnical Conference - Melecon '91 tenutosi a Ljubljana, Slovenia, Yugosl, nel 1991).
On the electro-optical characteristics of CMOS compatible photodiodes
Verzellesi G.
1992
Abstract
A numerical model for the solution of semiconductor-device equations in the presence of an optical-generation effect is presented. This model, developed as a part of the general-purpose semiconductor-device analysis program HFIELDS, is to be applied to the analysis of optical sensors used in semiconductor integrated imagers. Preliminary theoretical results on CMOS-compatible photodiodes are presented and compared with experiments.Pubblicazioni consigliate
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