BERTOCCHI, MATTEO
BERTOCCHI, MATTEO
A microscopic physical description of RTN current fluctuations in HfOx RRAM
2015 Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics
2015 Padovani, A.; Larcher, L.; Vandelli, L.; Bertocchi, M.; Cavicchioli, R.; Veksler, D.; Bersuker, G.
Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices
2014 Bertocchi, Matteo; E., Luppi; Degoli, Elena; V., Véniard; Ossicini, Stefano
Large crystal local-field effects in second-harmonic generation of a Si/CaF2 interface:An ab initio study
2012 Bertocchi, Matteo; E., Luppi; Degoli, Elena; V., Véniard; Ossicini, Stefano
Second Harmonic Generation in Silicon Based Heterostructures: The Role of Strain and Symmetry
2017 Bertocchi, Matteo; Degoli, Elena; Véniard, V; Luppi, E; Ossicini, Stefano
Second-harmonic Generation Spectroscopy from Time-dependent Density-functional Theory
2011 E., Luppi; H., Huebener; Bertocchi, Matteo; Degoli, Elena; Ossicini, Stefano; V., Veniard
Strain-designed strategy to induce and enhance second-harmonic generation in centrosymmetric and noncentrosymmetric materials
2015 Luppi, Eleonora; Degoli, Elena; Bertocchi, Matteo; Ossicini, Stefano; Véniard, Valérie
Work function bowing in Si1−xGex heterostructures: Ab initio results
2016 Amato, Michele; Bertocchi, Matteo; Ossicini, Stefano
Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy
2015 Pouch, Sylvain; Amato, Michele; Bertocchi, Matteo; Ossicini, Stefano; Chevalier, Nicolas; Melin, Thierry; Hartmann, Jean Michel; Renault, Olivier; Delaye, Vincent; Mariolle, Denis; Borowik, Lukasz
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A microscopic physical description of RTN current fluctuations in HfOx RRAM | 1-gen-2015 | Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca | |
| Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics | 1-gen-2015 | Padovani, A.; Larcher, L.; Vandelli, L.; Bertocchi, M.; Cavicchioli, R.; Veksler, D.; Bersuker, G. | |
| Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices | 1-gen-2014 | Bertocchi, Matteo; E., Luppi; Degoli, Elena; V., Véniard; Ossicini, Stefano | |
| Large crystal local-field effects in second-harmonic generation of a Si/CaF2 interface:An ab initio study | 1-gen-2012 | Bertocchi, Matteo; E., Luppi; Degoli, Elena; V., Véniard; Ossicini, Stefano | |
| Second Harmonic Generation in Silicon Based Heterostructures: The Role of Strain and Symmetry | 1-gen-2017 | Bertocchi, Matteo; Degoli, Elena; Véniard, V; Luppi, E; Ossicini, Stefano | |
| Second-harmonic Generation Spectroscopy from Time-dependent Density-functional Theory | 1-gen-2011 | E., Luppi; H., Huebener; Bertocchi, Matteo; Degoli, Elena; Ossicini, Stefano; V., Veniard | |
| Strain-designed strategy to induce and enhance second-harmonic generation in centrosymmetric and noncentrosymmetric materials | 1-gen-2015 | Luppi, Eleonora; Degoli, Elena; Bertocchi, Matteo; Ossicini, Stefano; Véniard, Valérie | |
| Work function bowing in Si1−xGex heterostructures: Ab initio results | 1-gen-2016 | Amato, Michele; Bertocchi, Matteo; Ossicini, Stefano | |
| Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy | 1-gen-2015 | Pouch, Sylvain; Amato, Michele; Bertocchi, Matteo; Ossicini, Stefano; Chevalier, Nicolas; Melin, Thierry; Hartmann, Jean Michel; Renault, Olivier; Delaye, Vincent; Mariolle, Denis; Borowik, Lukasz |