statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	1.986
SG - Singapore	324
CN - Cina	241
GB - Regno Unito	236
BR - Brasile	123
HK - Hong Kong	96
SE - Svezia	93
VN - Vietnam	81
IT - Italia	66
DE - Germania	49
BD - Bangladesh	39
UA - Ucraina	39
TR - Turchia	38
RU - Federazione Russa	34
FR - Francia	33
FI - Finlandia	27
KR - Corea	23
BG - Bulgaria	18
IN - India	16
CA - Canada	13
MX - Messico	9
EC - Ecuador	8
AR - Argentina	7
MA - Marocco	7
RO - Romania	6
IE - Irlanda	5
PK - Pakistan	5
PL - Polonia	5
UZ - Uzbekistan	5
ID - Indonesia	4
JP - Giappone	4
TH - Thailandia	4
AE - Emirati Arabi Uniti	3
AL - Albania	3
BE - Belgio	3
EG - Egitto	3
IR - Iran	3
KZ - Kazakistan	3
MY - Malesia	3
NL - Olanda	3
PH - Filippine	3
AT - Austria	2
BO - Bolivia	2
BZ - Belize	2
CY - Cipro	2
CZ - Repubblica Ceca	2
ES - Italia	2
HN - Honduras	2
JM - Giamaica	2
KE - Kenya	2
LK - Sri Lanka	2
MD - Moldavia	2
PS - Palestinian Territory	2
PY - Paraguay	2
SY - Repubblica araba siriana	2
TW - Taiwan	2
VE - Venezuela	2
ZA - Sudafrica	2
AO - Angola	1
AU - Australia	1
AZ - Azerbaigian	1
BH - Bahrain	1
CL - Cile	1
CO - Colombia	1
DK - Danimarca	1
IL - Israele	1
IQ - Iraq	1
JO - Giordania	1
KH - Cambogia	1
LA - Repubblica Popolare Democratica del Laos	1
LB - Libano	1
LV - Lettonia	1
MN - Mongolia	1
MU - Mauritius	1
NO - Norvegia	1
OM - Oman	1
PA - Panama	1
PE - Perù	1
SA - Arabia Saudita	1
SR - Suriname	1
TN - Tunisia	1
Totale	3.728

Nome	#
Adsorption of Indium on an InAs wetting layer deposited on the GaAs(001) surface	364
Monte Carlo simulation of electron transport in Si/SiO2 superlattices	305
Step energy and step interactions on the reconstructed GaAs(001) surface	298
Effects of wetting layer structure on surface phase stability and on indium surface diffusion	297
Indium surface diffusion on InAs (2x4) reconstructed wetting layers on GaAs(001)	292
In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001)	285
Semiclassical and quantum transport in Si/SiO2 superlattices	277
Structural stability of clean GaAs nanowires grown along the [111] direction	276
Surface Effects on the Atomic and Electronic Structure of Unpassivated GaAs Nanowires	271
Monte Carlo analysis of electron heating in Si/SiO2 superlattices	239
InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-Assembling of Qunatum Dots	235
In adatom diffusion on InxGa1-xAs/GaAs(001): effects of strain, reconstruction and composition	228
Monte Carlo simulation of electron transport in Si/SiO2 superlattices: vertical transport enhanced by a parallel field	188
Erratum: Step energy and step interactions on the reconstructed GaAs(001) surface (Physical Review B - Condensed Matter and Materials Physics (2014) 90 (115314) DOI: 10.1103/PhysRevB.90.115314)	186
Totale	3.741

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	17	0	0	0	0	0	0	0	0	0	0	0	17
2021/2022	298	1	44	41	19	6	11	22	13	30	18	59	34
2022/2023	286	35	30	27	20	38	42	3	35	36	0	12	8
2023/2024	137	6	12	6	19	42	5	13	19	10	0	0	5
2024/2025	668	23	5	2	45	142	90	71	62	77	12	57	82
2025/2026	996	47	61	73	107	191	83	113	40	80	84	61	56
Totale													3.741