Photoluminescence (PL) emission spectra have been carried out on a partially relaxed Si/Si1-xGex/Si quantum well (QW) grown by solid-source MBE at a nominal composition of x = 17%, The results are discussed in terms of the film morphology, as derived from structural techniques (SEM, RHEED, RES and XRD): especially as regards the presence of a high density of dots-like 3D structures. PL spectra show an intense brood band, attributed to excitonic recombinations at interstitial plateletes in the dots, with smaller X-NP and X-TO excitonic lines due to phonon-resolved interband transitions originated from the strained epitaxyal layer grown before the dot formation.
Photoluminescence characterization of SiGe QW grown by MBE / De Padova, P; Perfetti, P; Felici, R; Priori, S; Quaresima, C; Pizzoferrato, R; Casalboni, M; Prosposito, P; Corni, Federico; Tonini, Rita; Grilli, A; Raco, A.. - In: JOURNAL OF LUMINESCENCE. - ISSN 0022-2313. - STAMPA. - 72-74:(1997), pp. 324-326. [10.1016/S0022-2313(96)00203-7]
Photoluminescence characterization of SiGe QW grown by MBE
CORNI, Federico;TONINI, Rita;
1997
Abstract
Photoluminescence (PL) emission spectra have been carried out on a partially relaxed Si/Si1-xGex/Si quantum well (QW) grown by solid-source MBE at a nominal composition of x = 17%, The results are discussed in terms of the film morphology, as derived from structural techniques (SEM, RHEED, RES and XRD): especially as regards the presence of a high density of dots-like 3D structures. PL spectra show an intense brood band, attributed to excitonic recombinations at interstitial plateletes in the dots, with smaller X-NP and X-TO excitonic lines due to phonon-resolved interband transitions originated from the strained epitaxyal layer grown before the dot formation.
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