We present a new physical model that enables us to reproduce the digital gate current Random Telegraph Noise (RTN) fluctuations observed in ultra-thin SiON dielectrics in the early stages of post breakdown (BD). Gate current (IG) fluctuations are modeled assuming that some traps in the BD path switch between two unstable configurations, corresponding to neutral and negatively charged O vacancies. Energy levels of the trap considered in simulations here are consistent with values calculated from atomistic simulations. The model allows to reproduce accurately the mean and variation in the IG fluctuations observed on 16Å and 22Å thick SiON gate dielectric at different gate voltages.
A Physical Model for Post-Breakdown Digital Gate Current Noise / Padovani, A., Morassi, L., N., R., Larcher, L., L., W., K. L., P., G., B.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 31:9(2010), pp. 1032-1034. [10.1109/LED.2010.2055827]
A Physical Model for Post-Breakdown Digital Gate Current Noise
PADOVANI, ANDREA;MORASSI, LUCA;LARCHER, Luca;
2010
Abstract
We present a new physical model that enables us to reproduce the digital gate current Random Telegraph Noise (RTN) fluctuations observed in ultra-thin SiON dielectrics in the early stages of post breakdown (BD). Gate current (IG) fluctuations are modeled assuming that some traps in the BD path switch between two unstable configurations, corresponding to neutral and negatively charged O vacancies. Energy levels of the trap considered in simulations here are consistent with values calculated from atomistic simulations. The model allows to reproduce accurately the mean and variation in the IG fluctuations observed on 16Å and 22Å thick SiON gate dielectric at different gate voltages.
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