We present a compact experimental technique for the extraction of all parasitic series resistances of bipolar transistors, which require only few DC measurements and no special device structure. The method is based upon the fact that, due to impact ionization within the base-collector space-charge region, at a certain collector-base voltage the base current and therefore the voltage drop on the base resistance are reduced to zero.

A compact method for measuring parasitic resistances in bipolar transistors / Verzellesi, Giovanni; A., Chantre; R., Turetta; M., Cappellin; Pavan, Paolo; E., Zanoni. - STAMPA. - (1993), pp. 433-436. ((Intervento presentato al convegno European Solid State Device Research Conference (ESSDERC) tenutosi a Grenoble (France) nel Sept. 1993.

A compact method for measuring parasitic resistances in bipolar transistors

VERZELLESI, Giovanni;PAVAN, Paolo;
1993

Abstract

We present a compact experimental technique for the extraction of all parasitic series resistances of bipolar transistors, which require only few DC measurements and no special device structure. The method is based upon the fact that, due to impact ionization within the base-collector space-charge region, at a certain collector-base voltage the base current and therefore the voltage drop on the base resistance are reduced to zero.
European Solid State Device Research Conference (ESSDERC)
Grenoble (France)
Sept. 1993
433
436
Verzellesi, Giovanni; A., Chantre; R., Turetta; M., Cappellin; Pavan, Paolo; E., Zanoni
A compact method for measuring parasitic resistances in bipolar transistors / Verzellesi, Giovanni; A., Chantre; R., Turetta; M., Cappellin; Pavan, Paolo; E., Zanoni. - STAMPA. - (1993), pp. 433-436. ((Intervento presentato al convegno European Solid State Device Research Conference (ESSDERC) tenutosi a Grenoble (France) nel Sept. 1993.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/593292
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