NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes, for the control of their relative position and spread in the charge trapping material. Therefore, a deeper analysis of the injected-charge distribution region is very important for program/erase bias optimization, reliability prediction and future scaling. In this paper, we introduce and discuss two tools, based on subthreshold slope and temperature effects, able to correctly estimate program charge distribution features from simple ID - VGS measurements

Profiling charge distribution in NROM devices / Padovani, Andrea; Larcher, Luca; Pavan, Paolo. - STAMPA. - (2006), pp. 69-72. ((Intervento presentato al convegno Research in Microelectronics and Electronics 2006, Ph. D. tenutosi a Otranto (Italy) nel Giugno 2006.

Profiling charge distribution in NROM devices

PADOVANI, ANDREA;LARCHER, Luca;PAVAN, Paolo
2006

Abstract

NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes, for the control of their relative position and spread in the charge trapping material. Therefore, a deeper analysis of the injected-charge distribution region is very important for program/erase bias optimization, reliability prediction and future scaling. In this paper, we introduce and discuss two tools, based on subthreshold slope and temperature effects, able to correctly estimate program charge distribution features from simple ID - VGS measurements
Research in Microelectronics and Electronics 2006, Ph. D.
Otranto (Italy)
Giugno 2006
69
72
Padovani, Andrea; Larcher, Luca; Pavan, Paolo
Profiling charge distribution in NROM devices / Padovani, Andrea; Larcher, Luca; Pavan, Paolo. - STAMPA. - (2006), pp. 69-72. ((Intervento presentato al convegno Research in Microelectronics and Electronics 2006, Ph. D. tenutosi a Otranto (Italy) nel Giugno 2006.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/587545
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 2
social impact