NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes, for the control of their relative position and spread in the charge trapping material. Therefore, a deeper analysis of the injected-charge distribution region is very important for program/erase bias optimization, reliability prediction and future scaling. In this paper, we introduce and discuss two tools, based on subthreshold slope and temperature effects, able to correctly estimate program charge distribution features from simple ID - VGS measurements
Profiling charge distribution in NROM devices / Padovani, Andrea; Larcher, Luca; Pavan, Paolo. - STAMPA. - (2006), pp. 69-72. (Intervento presentato al convegno Research in Microelectronics and Electronics 2006, Ph. D. tenutosi a Otranto (Italy) nel Giugno 2006).
Profiling charge distribution in NROM devices
PADOVANI, ANDREA;LARCHER, Luca;PAVAN, Paolo
2006
Abstract
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes, for the control of their relative position and spread in the charge trapping material. Therefore, a deeper analysis of the injected-charge distribution region is very important for program/erase bias optimization, reliability prediction and future scaling. In this paper, we introduce and discuss two tools, based on subthreshold slope and temperature effects, able to correctly estimate program charge distribution features from simple ID - VGS measurements
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
