NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes for the control of their relative position and spread in the charge trapping material. In this paper, we present a new characterization tool able to sense charge distribution features in different program/erase conditions that can be efficiently used for program/erase bias optimization and reliability predictions. This new tool exploits temperature effects on ID-VGS current measurements

Temperature Monitor: a New Tool to Profile Charge Distribution in NROMTM Memory Devices / L., Avital; Padovani, Andrea; Larcher, Luca; I., Bloom; R., Arie; Pavan, Paolo; B., Eitan. - STAMPA. - (2006), pp. 534-540. ((Intervento presentato al convegno Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International tenutosi a San Josè (California) nel 26-30 March 2006.

Temperature Monitor: a New Tool to Profile Charge Distribution in NROMTM Memory Devices

PADOVANI, ANDREA;LARCHER, Luca;PAVAN, Paolo;
2006

Abstract

NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes for the control of their relative position and spread in the charge trapping material. In this paper, we present a new characterization tool able to sense charge distribution features in different program/erase conditions that can be efficiently used for program/erase bias optimization and reliability predictions. This new tool exploits temperature effects on ID-VGS current measurements
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
San Josè (California)
26-30 March 2006
534
540
L., Avital; Padovani, Andrea; Larcher, Luca; I., Bloom; R., Arie; Pavan, Paolo; B., Eitan
Temperature Monitor: a New Tool to Profile Charge Distribution in NROMTM Memory Devices / L., Avital; Padovani, Andrea; Larcher, Luca; I., Bloom; R., Arie; Pavan, Paolo; B., Eitan. - STAMPA. - (2006), pp. 534-540. ((Intervento presentato al convegno Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International tenutosi a San Josè (California) nel 26-30 March 2006.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/587543
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? ND
social impact