Motivated by the pioneering work of McFarland and Tang on multilayer photovoltaic devices, we discuss here structural and electronic properties of the Au/TiO2(110) interface for a coverage of 1 monolayer (1 ML) of gold, both for a stoichiometric and a reduced (Ti-rich) rutile surface. A detailed analysis of theSchottky barrier height for such systems is presented and the effects generated on this barrier by the presence of an oxygen vacancy (localized on the rutile support) are discussed.

Oxygen vacancy effects on the Schottky barrier height at the Au/TiO2(100) interface: a first principle study / Marri, Ivan; Ossicini, Stefano. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 147:5-6(2008), pp. 205-207. [10.1016/j.ssc.2008.05.018]

Oxygen vacancy effects on the Schottky barrier height at the Au/TiO2(100) interface: a first principle study

MARRI, Ivan;OSSICINI, Stefano
2008

Abstract

Motivated by the pioneering work of McFarland and Tang on multilayer photovoltaic devices, we discuss here structural and electronic properties of the Au/TiO2(110) interface for a coverage of 1 monolayer (1 ML) of gold, both for a stoichiometric and a reduced (Ti-rich) rutile surface. A detailed analysis of theSchottky barrier height for such systems is presented and the effects generated on this barrier by the presence of an oxygen vacancy (localized on the rutile support) are discussed.
2008
147
5-6
205
207
Oxygen vacancy effects on the Schottky barrier height at the Au/TiO2(100) interface: a first principle study / Marri, Ivan; Ossicini, Stefano. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 147:5-6(2008), pp. 205-207. [10.1016/j.ssc.2008.05.018]
Marri, Ivan; Ossicini, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/421710
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