RF current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s / Verzellesi, G., Pierobon, R., Rampazzo, F., Meneghesso, G., Chini, A., Mishra, U.K., Canali, C., Zanoni, E.. - STAMPA. - (2002), pp. 689-692. (2002 IEEE International Devices Meeting (IEDM) San Francisco, CA, usa Dec. 2002) [10.1109/IEDM.2002.1175932].
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s
VERZELLESI, Giovanni;CHINI, Alessandro;CANALI, Claudio;
2002
Abstract
RF current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
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