The performance and reliability implications of DC-to-RF dispersion effects are addressed. The proposed physical explanations and technological counteractions are reviewed. GaAs- and GaN-based FET technologies are considered, trying to point out both similar and peculiar aspects.
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues / Verzellesi, Giovanni; Meneghesso, G.; Chini, Alessandro; Zanoni, E.; Canali, Claudio. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 45:9-11(2005), pp. 1585-1592. [10.1016/j.microrel.2005.07.064]
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues
VERZELLESI, Giovanni;CHINI, Alessandro;CANALI, Claudio
2005
Abstract
The performance and reliability implications of DC-to-RF dispersion effects are addressed. The proposed physical explanations and technological counteractions are reviewed. GaAs- and GaN-based FET technologies are considered, trying to point out both similar and peculiar aspects.
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