A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.
New method for extracting collector series resistance of bipolar transistors / Verzellesi, Giovanni; Turetta, R.; Cappellin, M.; Pavan, Paolo; Chantre, A.; Zanoni, E.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 29:(1993), pp. 931-933.
New method for extracting collector series resistance of bipolar transistors
VERZELLESI, Giovanni;PAVAN, Paolo;
1993
Abstract
A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.Pubblicazioni consigliate
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