A Model for Hot-Electron Injection in the Passivation Layer of AlGaN/GaN HFETs Based on Monte Carlo Simulations

We propose a lean model for hot-electrons in Al-GaN/GaN HFETs, aimed at estimating the flux of carriers injected into the passivation layer above the AlGaN layer in the device drift region. Monte Carlo transport simulations are used to determine the hot-electron distribution and to verify the accuracy of the model equations. The model can be straightforwardly implemented into TCAD simulators to provide an estimate of the charge injected and/or trapped in the passivation during high drain voltage stress.