RUGGIERI, ALESSANDRO
RUGGIERI, ALESSANDRO
Dipartimento di Ingegneria "Enzo Ferrari"
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Assessment of dual-oxide options for LDMOS transistors in FinFET technology
2026 Ruggieri, Alessandro; Tondelli, Lisa; Selmi, Luca
Novel 3.3V RF-LDMOS in 16nm FinFET with the best RF and reliability trade-off enabling integrated Watt-level power amplifiers in connectivity SoC
2026 Viet Dinh, Thanh; Pronin, Nick; Ruggieri, Alessandro; H Both, Thiago; H Perera, Asanga; Dieball, Oliver; Pijper, R. M. T.; Swanenberg, M.; Xie, J.; Tondelli, Lisa; Selmi, Luca
On the design of LDMOS finFETs in advanced technology nodes
2024 Ruggieri, Alessandro; Tondelli, Lisa; Asanovski, Ruben; Selmi, Luca
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Assessment of dual-oxide options for LDMOS transistors in FinFET technology | 1-gen-2026 | Ruggieri, Alessandro; Tondelli, Lisa; Selmi, Luca | |
| Novel 3.3V RF-LDMOS in 16nm FinFET with the best RF and reliability trade-off enabling integrated Watt-level power amplifiers in connectivity SoC | 1-gen-2026 | Viet Dinh, Thanh; Pronin, Nick; Ruggieri, Alessandro; H Both, Thiago; H Perera, Asanga; Dieball, Oliver; Pijper, R. M. T.; Swanenberg, M.; Xie, J.; Tondelli, Lisa; Selmi, Luca | |
| On the design of LDMOS finFETs in advanced technology nodes | 1-gen-2024 | Ruggieri, Alessandro; Tondelli, Lisa; Asanovski, Ruben; Selmi, Luca |