We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) operating at low current densities, Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission, A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experiment.
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's / Canali, C., Pavan, P., Di Carlo, A., Lugli, P., Malik, R., Manfredi, M., Neviani, A., Vendrame, L., Zanoni, E., Zandler, G.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 43:11(1996), pp. 1769-1777. [10.1109/16.542420]
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's
Manfredi M.;Neviani A.;Zanoni E.;
1996
Abstract
We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) operating at low current densities, Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission, A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experiment.
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