Band-tail states, i.e., charge-carrier energy states located in the bandgap at the valence and conduction band edges of amorphous materials, even though not delocalized, exhibit nonzero mobility; thus, they are expected to contribute to the charge-conduction process. A microscopic model based on hydrodynamic transport equations for unipolar conduction, including trap, band-tail, and band states, and coupled to the Poisson equation is presented here. The equations are self-consistently solved by means of a numerical procedure, and the results provide qualitative and quantitative estimates of the influence of band-tail states (namely, of their energy distribution, density, and mobility) on the carrier heating, precursor of the Ovonic threshold switch.

The role of band-tail states on the electric properties of amorphous chalcogenides: A simulative approach / Brunetti, R.; Jacoboni, C.; Rudan, M.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 136:8(2024), pp. 0857011-0857019. [10.1063/5.0220117]

The role of band-tail states on the electric properties of amorphous chalcogenides: A simulative approach

Brunetti R.
;
Jacoboni C.
Investigation
;
2024

Abstract

Band-tail states, i.e., charge-carrier energy states located in the bandgap at the valence and conduction band edges of amorphous materials, even though not delocalized, exhibit nonzero mobility; thus, they are expected to contribute to the charge-conduction process. A microscopic model based on hydrodynamic transport equations for unipolar conduction, including trap, band-tail, and band states, and coupled to the Poisson equation is presented here. The equations are self-consistently solved by means of a numerical procedure, and the results provide qualitative and quantitative estimates of the influence of band-tail states (namely, of their energy distribution, density, and mobility) on the carrier heating, precursor of the Ovonic threshold switch.
2024
136
8
0857011
0857019
The role of band-tail states on the electric properties of amorphous chalcogenides: A simulative approach / Brunetti, R.; Jacoboni, C.; Rudan, M.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 136:8(2024), pp. 0857011-0857019. [10.1063/5.0220117]
Brunetti, R.; Jacoboni, C.; Rudan, M.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1357546
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