Statistical modeling of leakage currents through SiO2/high- κ dielectrics stacks for non-volatile memory applications

We present here a statistical Monte Carlo (MC) simulator modeling leakage currents across SiO2/high-kappa dielectric stacks. We show that simulations accurately reproduce experimental currents measured at various temperatures on capacitors with different high-k dielectric stacks. We exploit statistical simulations to investigate the impact of high-kappapsilas traps on leakage current distribution for flash memory applications. We demonstrate that the high defectiveness typical of high-k materials strongly reduces the potential improvement due to the introduction of band-gap engineered high-kappa tunnel dielectric stacks. In this regard, the simulator is a useful tool to optimize high-kappa tunnel stacks and to improve technology reliability issues related to flash memory applications.

We present here a statistical Monte Carlo (MC) simulator modeling leakage currents across SiO2/high-κ dielectric stacks. We show that simulations accurately reproduce experimental currents measured at various temperatures on capacitors with different high-k dielectric stacks. We exploit statistical simulations to investigate the impact of high-κ's traps on leakage current distribution for Flash memory applications. We demonstrate that the high defectiveness typical of high-k materials strongly reduces the potential improvement due to the introduction of band-gap engineered high-κ tunnel dielectric stacks. In this regard, the simulator is a useful tool to optimize high-κ tunnel stacks and to improve technology- reliability issues related to Flash memory applications. © 2008 IEEE.