We present here a statistical Monte Carlo (MC) simulator modeling leakage currents across SiO2/high-κ dielectric stacks. We show that simulations accurately reproduce experimental currents measured at various temperatures on capacitors with different high-k dielectric stacks. We exploit statistical simulations to investigate the impact of high-κ's traps on leakage current distribution for Flash memory applications. We demonstrate that the high defectiveness typical of high-k materials strongly reduces the potential improvement due to the introduction of band-gap engineered high-κ tunnel dielectric stacks. In this regard, the simulator is a useful tool to optimize high-κ tunnel stacks and to improve technology- reliability issues related to Flash memory applications. © 2008 IEEE.
Statistical modeling of leakage currents through SiO2/high- κ dielectrics stacks for non-volatile memory applications / Padovani, A.; Larcher, L.; Verma, S.; Pavan, P.; Majhi, P.; Kapur, P.; Parat, K.; Bersuker, G.; Saraswat, K.. - (2008), pp. 616-620. ((Intervento presentato al convegno 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS tenutosi a Phoenix, AZ, usa nel 2008 [10.1109/RELPHY.2008.4558955].
Data di pubblicazione: | 2008 | |
Titolo: | Statistical modeling of leakage currents through SiO2/high- κ dielectrics stacks for non-volatile memory applications | |
Autore/i: | Padovani, A.; Larcher, L.; Verma, S.; Pavan, P.; Majhi, P.; Kapur, P.; Parat, K.; Bersuker, G.; Saraswat, K. | |
Autore/i UNIMORE: | ||
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/RELPHY.2008.4558955 | |
Codice identificativo Scopus: | 2-s2.0-51649109938 | |
Codice identificativo ISI: | WOS:000257615900102 | |
Nome del convegno: | 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS | |
Luogo del convegno: | Phoenix, AZ, usa | |
Data del convegno: | 2008 | |
Serie: | IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | |
Pagina iniziale: | 616 | |
Pagina finale: | 620 | |
Citazione: | Statistical modeling of leakage currents through SiO2/high- κ dielectrics stacks for non-volatile memory applications / Padovani, A.; Larcher, L.; Verma, S.; Pavan, P.; Majhi, P.; Kapur, P.; Parat, K.; Bersuker, G.; Saraswat, K.. - (2008), pp. 616-620. ((Intervento presentato al convegno 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS tenutosi a Phoenix, AZ, usa nel 2008 [10.1109/RELPHY.2008.4558955]. | |
Tipologia | Relazione in Atti di Convegno |
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