In this paper, a multiscale modeling platform for neuromorphic computing devices connecting the atomic material properties to the electrical device performances is presented. The main ingredients of the modeling platform are discussed in view of the different technologies (e.g. RRAM, PCM, FTJ) proposed for 3D integrated neuromorphic computing.

Multiscale modeling of neuromorphic computing: From materials to device operations / Larcher, L., Padovani, A., Di Lecce, V.. - (2018), pp. 11.7.1-11.7.4. (63rd IEEE International Electron Devices Meeting, IEDM 2017 usa 2017) [10.1109/IEDM.2017.8268374].

Multiscale modeling of neuromorphic computing: From materials to device operations

Larcher L.;Padovani A.;Di Lecce V.
2018

Abstract

In this paper, a multiscale modeling platform for neuromorphic computing devices connecting the atomic material properties to the electrical device performances is presented. The main ingredients of the modeling platform are discussed in view of the different technologies (e.g. RRAM, PCM, FTJ) proposed for 3D integrated neuromorphic computing.
UB: PY; AOP
2018
2017
Inglese
63rd IEEE International Electron Devices Meeting, IEDM 2017
usa
2017
Technical Digest - International Electron Devices Meeting, IEDM
11.7.1
11.7.4
9781538635599
Institute of Electrical and Electronics Engineers Inc.
345 E 47TH ST, NEW YORK, NY 10017 USA
Larcher, L.; Padovani, A.; Di Lecce, V.
Atti di CONVEGNO::Relazione in Atti di Convegno
273
3
Multiscale modeling of neuromorphic computing: From materials to device operations / Larcher, L., Padovani, A., Di Lecce, V.. - (2018), pp. 11.7.1-11.7.4. (63rd IEEE International Electron Devices Meeting, IEDM 2017 usa 2017) [10.1109/IEDM.2017.8268374].
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info:eu-repo/semantics/conferenceObject
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1223191
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