We present in this paper a novel defect spectroscopy technique for extracting defect and material properties of gate oxides and dielectrics used for memory devices (e.g. DRAM, RRAM). The method is based on the correlate simulation of electrical characteristics (IV, CV, GV, BTI), to allow the determination of the energy distribution and depth profile of atomic defects within the material bandgap. This novel defect spectroscopy technique is applied to MOSFET gate stacks with Si and InGaAs, and to DRAM capacitors.
Defect spectroscopy from electrical measurements: A simulation based technique / Larcher, L.; Padovani, A.; Pramanik, D.; Kaczer, B.; Palumbo, F.. - (2018), pp. 145-147. (Intervento presentato al convegno 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 tenutosi a jpn nel 2018) [10.1109/EDTM.2018.8421450].
Defect spectroscopy from electrical measurements: A simulation based technique
Larcher L.;Padovani A.;Palumbo F.
2018
Abstract
We present in this paper a novel defect spectroscopy technique for extracting defect and material properties of gate oxides and dielectrics used for memory devices (e.g. DRAM, RRAM). The method is based on the correlate simulation of electrical characteristics (IV, CV, GV, BTI), to allow the determination of the energy distribution and depth profile of atomic defects within the material bandgap. This novel defect spectroscopy technique is applied to MOSFET gate stacks with Si and InGaAs, and to DRAM capacitors.
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