We perform experiments and device simulations to investigate the origin of current-voltage (I-V) linearity of TaO x -based resistive switching memory (RRAM) devices for their possible application as electronic synapses. By using electrical characterization and simulations, we link the electrical characteristics (linear or nonlinear I-V) to the microscopic properties of the conductive filament (CF). Our findings indicate that the shape and the thermal properties of the CF region are crucial to achieve linear I-V characteristics. These results allow optimizing the I-V curve linearity of TaO x -based RRAM devices, explaining the wide range of linear I-V characteristics experimentally observed on RRAM device obtained. When weight sum operation using SPICE simulations is performed, the read current is improved under the condition of linear I-V characteristics due to current loss minimization.

Investigation of I-V linearity in TaO x -Based RRAM devices for neuromorphic applications / Sung, C.; Padovani, A.; Beltrando, B.; Lee, D.; Kwak, M.; Lim, S.; Larcher, L.; Della Marca, V.; Hwang, H.. - In: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. - ISSN 2168-6734. - 7:1(2019), pp. 404-408. [10.1109/JEDS.2019.2902653]

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