We study how the variability of the conductance associated with single-dopant configurations affects the overall conductivity of long, realistic ultrathin Si nanowires (NW). We calculate the resistance associated with each single-dopant configuration from density-functional theory (DFT) calculations and we sum them up classically to obtain the resistance of the long wire. This allows to identify limiting factors for the performance of Si NWs based devices.
Conductance fluctuations in Si nanowires studied from first-principles / Iori, Federico; Ossicini, Stefano; Riccardo, Rurali. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 116:(2014), pp. 074303-1-074303-4. [10.1063/1.4892673]
Conductance fluctuations in Si nanowires studied from first-principles
IORI, Federico;OSSICINI, Stefano;
2014
Abstract
We study how the variability of the conductance associated with single-dopant configurations affects the overall conductivity of long, realistic ultrathin Si nanowires (NW). We calculate the resistance associated with each single-dopant configuration from density-functional theory (DFT) calculations and we sum them up classically to obtain the resistance of the long wire. This allows to identify limiting factors for the performance of Si NWs based devices.
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