EnglishWe investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/SiOx gate stacks. We observe two different IG-ID correlation patterns (i.e. of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOx close to the Si/SiOx interface. Results reported in this letter provide useful information for improving the understanding of IG/ID RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.
Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs / W. H., Liu; Padovani, Andrea; Larcher, Luca; N., Raghavan; K. L., Pey. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 35(2014), pp. 157-159.
| Data di pubblicazione: | 2014 |
| Titolo: | Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs |
| Autore/i: | W. H., Liu; Padovani, Andrea; Larcher, Luca; N., Raghavan; K. L., Pey |
| Autore/i UNIMORE: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/LED.2013.2295923 |
| Rivista: | |
| Volume: | 35 |
| Pagina iniziale: | 157 |
| Pagina finale: | 159 |
| Codice identificativo ISI: | WOS:000331377500003 |
| Codice identificativo Scopus: | 2-s2.0-84893876301 |
| Citazione: | Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs / W. H., Liu; Padovani, Andrea; Larcher, Luca; N., Raghavan; K. L., Pey. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 35(2014), pp. 157-159. |
| Tipologia | Articolo su rivista |
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