We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/SiOx gate stacks. We observe two different IG-ID correlation patterns (i.e. of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOx close to the Si/SiOx interface. Results reported in this letter provide useful information for improving the understanding of IG/ID RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.

Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs / W. H., Liu; Padovani, Andrea; Larcher, Luca; N., Raghavan; K. L., Pey. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 35:2(2014), pp. 157-159. [10.1109/LED.2013.2295923]

Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs

PADOVANI, ANDREA;LARCHER, Luca;
2014

Abstract

We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/SiOx gate stacks. We observe two different IG-ID correlation patterns (i.e. of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOx close to the Si/SiOx interface. Results reported in this letter provide useful information for improving the understanding of IG/ID RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.
2014
35
2
157
159
Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs / W. H., Liu; Padovani, Andrea; Larcher, Luca; N., Raghavan; K. L., Pey. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 35:2(2014), pp. 157-159. [10.1109/LED.2013.2295923]
W. H., Liu; Padovani, Andrea; Larcher, Luca; N., Raghavan; K. L., Pey
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/990508
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